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THS7374IPWR Datasheet(PDF) 2 Page - Texas Instruments |
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THS7374IPWR Datasheet(HTML) 2 Page - Texas Instruments |
2 / 42 page THS7374 SLOS590B – JULY 2008 – REVISED JANUARY 2011 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. PACKAGE/ORDERING INFORMATION(1)(2) PRODUCT PACKAGE-LEAD TRANSPORT MEDIA, QUANTITY ECO STATUS(2) THS7374IPW Rails, 90 TSSOP-14 Pb-Free, Green THS7374IPWR Tape and Reel, 2000 (1) For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI web site at www.ti.com. (2) These packages conform to Lead (Pb)-free and green manufacturing specifications. Additional details including specific material content can be accessed at www.ti.com/leadfree. GREEN: TI defines Green to mean Lead (Pb)-Free and in addition, uses less package materials that do not contain halogens, including bromine (Br), or antimony (Sb) above 0.1% of total product weight. N/A: Not yet available Lead (Pb)-Free; for estimated conversion dates, go to www.ti.com/leadfree. Pb-FREE: TI defines Lead (Pb)-Free to mean RoHS compatible, including a lead concentration that does not exceed 0.1% of total product weight, and, if designed to be soldered, suitable for use in specified lead-free soldering processes. ABSOLUTE MAXIMUM RATINGS (1) Over operating free-air temperature range unless otherwise noted. THS7374 UNIT Supply voltage, VS+ to GND 5.5 V Input voltage, VI –0.4 to VS V Output current, IO 100 mA Continuous power dissipation See Dissipation Ratings Table Maximum junction temperature, any condition(2) TJ +150 °C Maximum junction temperature, continuous operation, long-term +125 °C reliability(3), TJ Storage temperature range, TSTG –65 to +150 °C Human body model (HBM) 2000 V ESD ratings Charged device model (CDM) 1000 V Machine model (MM) 200 V (1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. (2) The absolute maximum junction temperature under any condition is limited by the constraints of the silicon process. (3) The absolute maximum junction temperature for continuous operation is limited by the package constraints. Operation above this temperature may result in reduced reliability and/or lifetime of the device. DISSIPATION RATINGS qJC qJA AT TA ≤ +25°C AT TA = +85°C PACKAGE (°C/W) (°C/W) POWER RATING POWER RATING TSSOP-14 (PW) 35 115 870 mW 348 mW RECOMMENDED OPERATING CONDITIONS MIN NOM MAX UNIT Supply voltage, VS+ 3 5 V Ambient temperature, TA –40 +85 °C 2 Submit Documentation Feedback Copyright © 2008–2011, Texas Instruments Incorporated Product Folder Link(s): THS7374 |
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