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THS7374IPWR Datasheet(PDF) 2 Page - Texas Instruments

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Part # THS7374IPWR
Description  4-Channel SDTV Video Amplifier with 6th-Order Filters and 6-dB Gain
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

THS7374IPWR Datasheet(HTML) 2 Page - Texas Instruments

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THS7374
SLOS590B – JULY 2008 – REVISED JANUARY 2011
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGE/ORDERING INFORMATION(1)(2)
PRODUCT
PACKAGE-LEAD
TRANSPORT MEDIA, QUANTITY
ECO STATUS(2)
THS7374IPW
Rails, 90
TSSOP-14
Pb-Free, Green
THS7374IPWR
Tape and Reel, 2000
(1)
For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
(2)
These packages conform to Lead (Pb)-free and green manufacturing specifications. Additional details including specific material content
can be accessed at www.ti.com/leadfree.
GREEN: TI defines Green to mean Lead (Pb)-Free and in addition, uses less package materials that do not contain halogens, including
bromine (Br), or antimony (Sb) above 0.1% of total product weight. N/A: Not yet available Lead (Pb)-Free; for estimated conversion
dates, go to www.ti.com/leadfree. Pb-FREE: TI defines Lead (Pb)-Free to mean RoHS compatible, including a lead concentration that
does not exceed 0.1% of total product weight, and, if designed to be soldered, suitable for use in specified lead-free soldering
processes.
ABSOLUTE MAXIMUM RATINGS
(1)
Over operating free-air temperature range unless otherwise noted.
THS7374
UNIT
Supply voltage, VS+ to GND
5.5
V
Input voltage, VI
–0.4 to VS
V
Output current, IO
100
mA
Continuous power dissipation
See Dissipation Ratings Table
Maximum junction temperature, any condition(2) TJ
+150
°C
Maximum junction temperature, continuous operation, long-term
+125
°C
reliability(3), TJ
Storage temperature range, TSTG
–65 to +150
°C
Human body model (HBM)
2000
V
ESD ratings
Charged device model (CDM)
1000
V
Machine model (MM)
200
V
(1)
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2)
The absolute maximum junction temperature under any condition is limited by the constraints of the silicon process.
(3)
The absolute maximum junction temperature for continuous operation is limited by the package constraints. Operation above this
temperature may result in reduced reliability and/or lifetime of the device.
DISSIPATION RATINGS
qJC
qJA
AT TA ≤ +25°C
AT TA = +85°C
PACKAGE
(°C/W)
(°C/W)
POWER RATING
POWER RATING
TSSOP-14 (PW)
35
115
870 mW
348 mW
RECOMMENDED OPERATING CONDITIONS
MIN
NOM
MAX
UNIT
Supply voltage, VS+
3
5
V
Ambient temperature, TA
–40
+85
°C
2
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Copyright © 2008–2011, Texas Instruments Incorporated
Product Folder Link(s): THS7374


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