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EGP20K Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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EGP20K Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
1 / 2 page FEATURES Low cost Diffused junction Low leakage Low forward voltage drop MECHANICAL DATA Terminals: Axial lead ,solderable per MIL- STD-750,Method 2026 Polarity: Color band denotes cathode Weight: 0.014 ounces,0.39 grams Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. UNITS Maximum recurrent peak reverse voltage VRRM 50 100 150 200 300 400 600 800 V Maximum RMS voltage VRMS 35 70 105 140 210 280 420 560 V Maximum DC blocking voltage VDC Maximum average forw ard rectified current 9.5mm lead length, @T A=75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J=125 Maximum instantaneous forw ard voltage @ 2.0 A VF V Maximum reverse current @T A=25 at rated DC blocking voltage @T A=125 Maximum reverse recovery (Note1) trr ns Typical junction capacitance (Note2) CJ pF RθJA RθJL Operating junction temperature range TJ Storage temperature range TSTG 3.Thermal resistance f rom junction to ambient. IFSM IR NOTE: 1. Measured with I F=0.5A, IR=1A, Irr=0. 25A. 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. A 1.25 1.7 Typical thermal resistance (Note3) - 55 ---- + 150 0.95 EGP20A(Z) --- EGP20K(Z) A IF(AV) 2.0 HIGH EFFICIENCY RECTIFIERS VOLTAGE RANGE: 50 --- 800 V CURRENT: 2.0 A MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Case:JEDEC DO--15,molded plastic EGP EGP EGP EGP EGP EGP EGP EGP 20A 20B 20C 20D 20F 20G 20J 20K The plastic material carries U/L recognition 94V-0 DO - 15 High current capability Easily cleaned with Alcohol,Isopropanol and similar solvents /W 40 A 15 50 - 55 ---- + 150 70 45 75 5.0 100 50 100 150 200 300 400 600 800 V 75 Typical thermal resistance (Note 4) 4.Thermal resistance from junction to lead. Dimensions in millimeters www.diode.kr Diode Semiconductor Korea |
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