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EGP30F Datasheet(PDF) 2 Page - Diode Semiconductor Korea |
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EGP30F Datasheet(HTML) 2 Page - Diode Semiconductor Korea |
2 / 2 page FIG.2 -- TYPICAL FORWARD CHARACTERISTIC FIG.3 -- FORWARD DERATING CURVE z FIG.4 -- TYPICAL JUNCTION CAPACITANCE FIG.5 -- PEAK FORWARD SURGE CURRENT AMBIENT TEMPERATURE, NUMBER OF CYCLES AT 60Hz REVERSE VOLTAGE,VOLTS SET TIME BASE FOR 20/30 ns/cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF. JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC EGP30A(Z)---EGP30K(Z) TJ=25 Pulse Width=300 µS 0.2 0 0.1 1 10 100 1.4 0.8 0.4 0.6 1 1.2 EGP30A-EGP30D 2 1.6 1.8 EGP30F-EGP30G 0 0.1 1 10 100 EGP30A-EGP30D EGP30F&EGP30K 1000 TJ=25 25 50 75 100 125 150 175 4 (+) PULSE GENERATOR (NOTE2) (-) D.U.T. 1 NONIN- DUCTIVE 50 N1. 10 N1. OSCILLOSCOPE (NOTE1) (+) 25VDC (approx) (-) -1 .0 A -0 .2 5 A 0 +0.5A t rr 1c m EGP30J-EGP30K 0 1.0 2.0 3.0 0 25 50 75 100 125 150 Single Phase Half W ave 60Hz Resistive or Inductive Load 0 1 10 100 TJ=125 . 3ms Single Half Sine-Wave 25 50 75 100 125 150 175 Diode Semiconductor Korea www.diode.kr |
Similar Part No. - EGP30F |
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Similar Description - EGP30F |
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