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1H5G Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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1H5G Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
1 / 2 page FEATURES Diffused junction Glass passivated chip junction High current capability High reliability High surge current capability MECHANICAL DATA Case:JEDEC R-1,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.007 ounces,0.20 grams Mounting position: Any Ratings at 25 am bient tem perature unles s otherwise specified. Single phase,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%. UNITS Maximum recurrent peak reverse voltage VRRM 200 300 400 600 800 1000 V Maximum RMS voltage VRMS 140 210 280 420 560 700 V Maximum DC blocking voltage VDC 200 300 400 600 800 1000 V Maximum average forw ard rectif ied current 9.5mm lead length, @T A=75 Peak f orw ard surge current 8.3ms single half -sine-w ave superimposed on rated load @T J=125 Maximum instantaneous f orw ard voltage @ 1.0 A VF V Maximum reverse current @T A=25 at rated DC blocking voltage @T A=100 Maximum reverse recovery time (Note1) t rr ns Typical junction capacitance (Note2) CJ pF Typical thermal resistance (Note3) RθJA /W Operating junction temperature range TJ Storage temperature range TSTG 60 - 55 ---- + 150 15 50 100 100 50 1.3 20 50 35 70 100.0 R - 1 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 1.0 1H1G---1H8G A 5.0 IF(AV) 1.0 HIGH EFFICIENCY RECTIFIERS 70 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.0 A 3. Thermal resistance f rom junction to ambient. A 30.0 IFSM NOTE: 1. Measured with I F=0.5A, IR=1A, I rr=0. 25A. IR A 2. Measured at 1.0MH Z and applied rev ers e v olt age of 4. 0V D C . 1.7 - 55 ---- + 150 1H1G 1H2G 1H3G 1H4G 1H5G 1H6G 1H7G 1H8G Dimensions in millimeters www.diode.kr Diode Semiconductor Korea |
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