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SN3545N8-G Datasheet(PDF) 1 Page - Supertex, Inc |
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SN3545N8-G Datasheet(HTML) 1 Page - Supertex, Inc |
1 / 6 page Supertex inc. Supertex inc. www.supertex.com Doc.# DSFP-DN3545 C070113 DN3545 Features ► High input impedance ► Low input capacitance ► Fast switching speeds ► Low on-resistance ► Free from secondary breakdown ► Low input and output leakage Applications ► Normally-on switches ► Solid state relays ► Converters ► Linear amplifiers ► Constant current sources ► Power supply circuits ► Telecom General Description These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Absolute Maximum Ratings Parameter Value Drain-to-source voltage BV DSX Drain-to-gate voltage BV DGX Gate-to-source voltage ±20V Operating and storage temperature -55OC to +150OC Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. N-Channel Depletion-Mode Vertical DMOS FET Product Marking YY = Year Sealed WW = Week Sealed = “Green” Packaging SiDN 3545 YYWW DN5MW W = Code for week sealed = “Green” Packaging TO-92 TO-243AA (SOT-89) GATE SOURCE DRAIN GATE SOURCE DRAIN DRAIN TO-92 TO-243AA (SOT-89) Pin Configuration Package may or may not include the following marks: Si or Package may or may not include the following marks: Si or -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. Refer to ‘P0xx’ Tape & Reel Specs for P002, P003, P005, P013, and P014 TO-92 Taping Specifications and Winding Styles Part Number Package Options Packing SN3545N3-G TO-92 1000/Bag SN3545N3-G P002 TO-92 2000/Reel SN3545N3-G P003 TO-92 2000/Reel SN3545N3-G P005 TO-92 2000/Reel SN3545N3-G P013 TO-92 2000/Reel SN3545N3-G P014 TO-92 2000/Reel SN3545N8-G TO-243AA (SOT-89) 2000/Reel Ordering Information Product Summary BV DSX/BVDGX R DS(ON) (max) I DSS (min) 450V 20Ω 200mA Package θ ja TO-92 132OC/W TO-243AA (SOT-89) 133OC/W Typical Thermal Resistance |
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Similar Description - SN3545N8-G |
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