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TL760M33QKVURQ1 Datasheet(PDF) 2 Page - Texas Instruments |
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TL760M33QKVURQ1 Datasheet(HTML) 2 Page - Texas Instruments |
2 / 12 page TL760M33-Q1 SGLS284I – OCTOBER 2005 – REVISED DECEMBER 2010 www.ti.com ABSOLUTE MAXIMUM RATINGS (1) over operating virtual junction temperature range (unless otherwise noted) VI Maximum input voltage 45 V TJ Operating virtual junction temperature 150°C Tstg Storage temperature range –65°C to 150°C (1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. PACKAGE THERMAL DATA (1) PACKAGE BOARD qJA TO-252 (KVU) High K, JESD 51-5 30.3°C/W TO-263 (KTT) High K, JESD 51-5 26.9°C/W (1) Maximum power dissipation is a function of TJ(max), qJA, and TA. The maximum allowable power dissipation at any allowable ambient temperature is PD = (TJ(max) – TA)/qJA. Operating at the absolute maximum TJ of 150°C can impact reliability. THERMAL RESISTANCE 1-oz copper, one-layer PCB THERMAL RESISTANCE VALUE RJA 55°C/W (area = 240 mm2) RJC 5.5°C/W from FET to tab RJC 0.1°C/W from die center to tab RECOMMENDED OPERATING CONDITIONS MIN MAX UNIT VI Input voltage 3.8 26 V IO Output current 0 500 mA TJ Operating virtual-junction temperature –40 150 °C ELECTRICAL CHARACTERISTICS VI = 6 V, IO = 500 mA, TJ = –40°C to 150°C (unless otherwise noted) PARAMETER TEST CONDITIONS(1) MIN TYP MAX UNIT IO = 5 mA to 500 mA, VI = 3.8 V to 26 V, TJ = 125°C 3.2 3.3 3.4 VO Output voltage V TJ = 150°C, IO = 5 mA to 300 mA, VI = 3.8 V to 26 V 3.2 3.3 3.4 IO = 250 mA 8 15 IQ Current consumption, IQ = II – IO VI = 6 V mA IO = 500 mA 20 30 Line regulation VI = 3.8 V to 28 V 10 25 mV PSRR Power-supply ripple rejection f = 100 Hz, Vripple = 0.5 VPP, VI = 6 V 62 dB Load regulation IO = 5 mA to 500 mA 5 30 mV IO = 250 mA 400 VDO Dropout voltage(2) mV IO = 500 mA 500 (1) Pulse-testing techniques are used to maintain the virtual junction temperature as close to the ambient temperature as possible. Thermal effects must be taken into account separately. All characteristics are measured with a 0.1-mF capacitor across the input and a 22-mF tantalum capacitor, with equivalent series resistance of 1.5 Ω on the output. (2) Measured when the output voltage, VO, has dropped 100 mV from the nominal value obtained when VI = 6 V 2 Submit Documentation Feedback Copyright © 2005–2010, Texas Instruments Incorporated |
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