K6X4016T3F-TB85 datasheet(6/9 Pages) SAMSUNG

Part #	K6X4016T3F-TB85

Description	256Kx16 bit Low Power and Low Voltage CMOS Static RAM

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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6 / 9 page

K6X4016T3F Family

CMOS SRAM

Revision 1.0

August 2003

6

Address

Data Out

Previous Data Valid

Data Valid

TIMING DIAGRAMS

TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH, UB or/and LB=VIL)

TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)

Data Valid

High-Z

tRC

CS

Address

UB, LB

OE

Data out

tAA

tRC

tOH

tAA

tCO

tBA

tOE

tOLZ

tBLZ

tLZ

tOHZ

tBHZ

tHZ

NOTES (READ CYCLE)

1.

tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage

levels.

2. At any given temperature and voltage condition,

tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device

interconnection.

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K6X4016T3F-TB85 Datasheet(PDF) 6 Page - Samsung semiconductor

K6X4016T3F-TB85 Datasheet(HTML) 6 Page - Samsung semiconductor

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