IDT71V65603S100BQ datasheet(6/26 Pages) IDT

Part #	IDT71V65603S100BQ

Description	256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs

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Manufacturer	IDT [Integrated Device Technology]

Direct Link	http://www.idt.com

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6

IDT71V65603, IDT71V65803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMs with

ZBT

™

™ Feature, 3.3V I/O, Burst Counter, and Pipelined Outputs

Commercial and Industrial Temperature Ranges

Absolute Maximum Ratings(1)

Pin Configuration - 512K x 18

119 BGA Capacitance(1)

(TA = +25° C, f = 1.0MHz)

Top View

100 TQFP

NOTES:

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may

cause permanent damage to the device. This is a stress rating only and functional

operation of the device at these or any other conditions above those indicated

in the operational sections of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect reliability.

2. VDD terminals only.

3. VDDQ terminals only.

4. Input terminals only.

5. I/O terminals only.

6. This is a steady-state DC parameter that applies after the power supply has

reached its nominal operating value. Power sequencing is not necessary;

however, the voltage on any input or I/O pin cannot exceed VDDQ during power

supply ramp up.

7. TA is the "instant on" case temperature.

NOTE:

1. This parameter is guaranteed by device characterization, but not production tested.

Symbol

Rating

Commercial &

Industrial

Unit

VTERM(2)

Terminal Voltage with

Respect to GND

-0.5 to +4.6

V

VTERM(3,6)

Terminal Voltage with

Respect to GND

-0.5 to VDD

V

VTERM(4,6)

Terminal Voltage with

Respect to GND

-0.5 to VDD +0.5

V

VTERM(5,6)

Terminal Voltage with

Respect to GND

-0.5 to VDDQ +0.5

V

TA(7)

Commercial

Operating Temperature

-0 to +70

oC

Industrial

Operating Temperature

-40 to +85

oC

TBIAS

Temperature

Under Bias

-55 to +125

oC

TSTG

Storage

Temperature

-55 to +125

oC

PT

Power Dissipation

2.0

W

IOUT

DC Output Current

50

mA

5304 tbl 06

Symbol

Parameter(1)

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 3dV

5

pF

CI/O

I/O Capacitance

VOUT = 3dV

7

pF

5304 tbl 07

100 999897 96 9594 93 92 91 90

8786 85 84838281

89 88

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50

NC

VDDQ

VSS

NC

I/OP2

I/O15

I/O14

VSS

VDDQ

I/O13

I/O12

VSS

VDD

I/O11

I/O10

VDDQ

VSS

I/O9

I/O8

NC

VSS

VDDQ

NC

80

79

78

77

76

75

74

73

72

71

70

69

68

67

66

65

64

63

62

61

60

59

58

57

56

55

54

53

52

51

NC

VDDQ

VSS

NC

I/OP1

I/O7

I/O6

VSS

VDDQ

I/O5

I/O4

VSS

VDD

I/O3

I/O2

VDDQ

VSS

I/O1

I/O0

NC

VSS

VDDQ

NC

5304 drw 02a

VDD(1)

NC

VDD(1)

NC

VDD(1)

A10

ZZ

,

NOTES:

1. Pins 14, 16 and 66 do not have to be connected directly to VDD as long as

the input voltage is

≥ VIH.

2. Pin 84 is reserved for a future 16M.

3. DNU=Do not use. Pins 38, 39, 42 and 43 are reserved for respective

JTAG pins: TMS, TDI, TDO and TCK. The current die revision allows

these pins to be left unconnected, tied LOW (VSS), or tied HIGH (VDD).

Symbol

Parameter(1)

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 3dV

7

pF

CI/O

I/O Capacitance

VOUT = 3dV

7

pF

5304 tbl 07a

100 TQFP Capacitance(1)

(TA = +25° C, f = 1.0MHz)

Symbol

Parameter(1)

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 3dV

TBD

pF

CI/O

I/O Capacitance

VOUT = 3dV

TBD

pF

5304 tbl 07b

165 fBGA Capacitance(1)

(TA = +25° C, f = 1.0MHz)

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