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IRLR2905 Datasheet(PDF) 2 Page - International Rectifier

Part No. IRLR2905
Description  HEXFET Power MOSFET
Download  10 Pages
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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 2 page
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IRLR/U2905
2
www.irf.com
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 25A, VGS = 0V
„
trr
Reverse Recovery Time
–––
80
120
ns
TJ = 25°C, IF = 25A
Qrr
Reverse RecoveryCharge
–––
210
320
nC
di/dt = 100A/µs
„‡
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
42
…
160
A
‚ V
DD = 25V, starting TJ = 25°C, L =470µH
RG = 25Ω, IAS = 25A. (See Figure 12)
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
† This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact.
‡ Uses IRLZ44N data and test conditions.
ƒ ISD ≤ 25A, di/dt ≤ 270A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Notes:
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.070 –––
V/°C
Reference to 25°C, ID = 1mA
–––
––– 0.027
VGS = 10V, ID = 25A
„
–––
––– 0.030
W
VGS = 5.0V, ID = 25A
„
–––
––– 0.040
VGS = 4.0V, ID = 21A
„
VGS(th)
Gate Threshold Voltage
1.0
–––
2.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
21
–––
–––
S
VDS = 25V, ID = 25A
‡
–––
–––
25
µA
VDS = 55V, VGS = 0V
–––
–––
250
VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
nA
VGS = 16V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -16V
Qg
Total Gate Charge
–––
–––
48
ID = 25A
Qgs
Gate-to-Source Charge
–––
–––
8.6
nC
VDS = 44V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
25
VGS = 5.0V, See Fig. 6 and 13
„‡
td(on)
Turn-On Delay Time
–––
11
–––
VDD = 28V
tr
Rise Time
–––
84
–––
ns
ID = 25A
td(off)
Turn-Off Delay Time
–––
26
–––
RG = 3.4Ω, VGS = 5.0V
tf
Fall Time
–––
15
–––
RD = 1.1Ω, See Fig. 10
„‡
Between lead,
6mm (0.25in.)
from package
and center of die contact
†
Ciss
Input Capacitance
–––
1700
–––
VGS = 0V
Coss
Output Capacitance
–––
400
–––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
150
–––
ƒ = 1.0MHz, See Fig. 5
‡
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
nH
IGSS
S
D
G
LS
InternalSourceInductance
–––
7.5
–––
RDS(on)
StaticDrain-to-SourceOn-Resistance
LD
InternalDrainInductance
–––
4.5
–––
IDSS
Drain-to-SourceLeakageCurrent
… Caculated continuous current based on maximum allowable
junction temperature;
Package limitation current = 20A.




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