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LMV611 Datasheet(PDF) 7 Page - Texas Instruments

Part # LMV611
Description  LMV61x Single, Dual, and Quad, 1.4-MHz, Low-Power, General-Purpose 1.8-V Operational Amplifiers
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

LMV611 Datasheet(HTML) 7 Page - Texas Instruments

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7
LMV611, LMV612, LMV614
www.ti.com
SNOSC69C – APRIL 2012 – REVISED JULY 2016
Product Folder Links: LMV611 LMV612 LMV614
Submit Documentation Feedback
Copyright © 2012–2016, Texas Instruments Incorporated
(1)
Electrical characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in
very limited self-heating of the device such that TJ = TA. No assurance of parametric performance is indicated in the electrical tables
under conditions of internal self-heating where TJ > TA. See Application and Implementation for information of temperature derating of
the device. Absolute Maximum Ratings indicated junction temperature limits beyond which the device may be permanently degraded,
either mechanically or electrically.
(2)
All limits are specified by testing or statistical analysis.
(3)
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and also depends on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
(4)
Connected as voltage follower with input step from Vto V+. Number specified is the slower of the positive and negative slew rates.
(5)
Input-referred, RL = 100 kΩ connected to V
+ / 2. Each amp excited in turn with 1 kHz to produce V
O = 3 VPP (for supply voltages < 3 V,
VO = V
+).
6.6 Electrical Characteristics – 1.8 V (AC)
All limits ensured for TJ = 25°C, V
+ = 1.8 V, V = 0 V, V
CM = V
+/ 2, V
O = V
+/ 2, and R
L > 1 MΩ (unless otherwise noted).
(1)
PARAMETER
TEST CONDITIONS
MIN(2)
TYP(3)
MAX(2)
UNIT
SR
Slew rate(4)
0.35
V/µs
GBW
Gain-bandwidth product
1.4
MHz
Φm
Phase margin
67
°
Gm
Gain margin
7
dB
en
Input-referred voltage noise
f = 10 kHz, VCM = 0.5 V
60
nV/
√Hz
in
Input-referred current noise
f = 10 kHz
0.08
pA/
√Hz
THD
Total harmonic distortion
f = 1 kHz, AV = +1,
RL = 600 Ω, VIN = 1 VPP
0.023%
Amp-to-amp isolation(5)
123
dB
(1)
Electrical characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in
very limited self-heating of the device such that TJ = TA. No assurance of parametric performance is indicated in the electrical tables
under conditions of internal self-heating where TJ > TA. See Application and Implementation for information of temperature derating of
the device. Absolute Maximum Ratings indicated junction temperature limits beyond which the device may be permanently degraded,
either mechanically or electrically.
(2)
All limits are specified by testing or statistical analysis.
(3)
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and also depends on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
(4)
For specified temperature ranges, see input common mode voltage specifications.
6.7 Electrical Characteristics – 2.7 V (DC)
All limits ensured for TJ = 25°C, V
+ = 2.7 V, V = 0 V, V
CM = V
+/ 2, V
O = V
+/ 2, and R
L > 1 MΩ (unless otherwise noted).
(1)
PARAMETER
TEST CONDITIONS
MIN(2)
TYP(3)
MAX(2)
UNIT
VOS
Input offset voltage
LMV611 (single)
1
4
mV
LMV612 (dual) and
LMV614 (quad)
1
5.5
TCVOS
Input offset voltage average drift
5.5
µV/°C
IB
Input bias current
15
nA
IOS
Input offset current
8
nA
IS
Supply current (per channel)
105
190
µA
CMRR
Common-mode rejection ratio
LMV611, 0 V
≤ VCM ≤ 1.5 V,
2.3 V
≤ VCM ≤ 2.7 V
(4)
60
81
dB
LMV612 and LMV614,
0 V
≤ VCM ≤ 1.5 V,
2.3 V
≤ VCM ≤ 2.7 V
(4)
55
80
−0.2 V ≤ VCM ≤ 0 V,
2.7 V
≤ VCM ≤ 2.9 V
50
74
PSRR
Power supply rejection ratio
1.8 V
≤ V+ ≤ 5 V,
VCM = 0.5 V
100
dB


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