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MTB020A03KV8 Datasheet(PDF) 4 Page - Cystech Electonics Corp.

Part # MTB020A03KV8
Description  Dual N-Channel Enhancement Mode MOSFET
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Manufacturer  CYSTEKEC [Cystech Electonics Corp.]
Direct Link  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB020A03KV8 Datasheet(HTML) 4 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C143V8
Issued Date : 2016.06.13
Revised Date :
Page No. : 4/9
MTB020A03KV8
CYStek Product Specification
Typical Characteristics :
Typical Output Characteristics
0
5
10
15
20
25
30
35
40
012
345
VDS, Drain-Source Voltage(V)
VGS=3V
10V, 9V, 8V, 7V, 6V, 5V
3.5V
4V
Brekdown Voltage vs Ambient Temperature
0.4
0.6
0.8
1
1.2
1.4
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
ID=250μA,
VGS=0V
Static Drain-Source On-State resistance vs Drain Current
10
100
1000
0.01
0.1
1
10
100
ID, Drain Current(A)
VGS=10V
VGS=4.5V
Reverse Drain Current vs Source-Drain Voltage
0.2
0.4
0.6
0.8
1
1.2
02468
1
IDR, Reverse Drain Current(A)
0
Tj=25°C
Tj=150°C
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
0
10
20
30
40
50
60
70
80
90
100
02
4
6
8
10
Drain-Source On-State Resistance vs Junction Tempearture
0.4
0.8
1.2
1.6
2
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
VGS=10V, ID=10A
RDS(ON)@Tj=25°C : 15.2mΩ typ.
VGS, Gate-Source Voltage(V)
ID=10A


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