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LS5909 Datasheet(PDF) 1 Page - Linear Integrated Systems |
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LS5909 Datasheet(HTML) 1 Page - Linear Integrated Systems |
1 / 2 page Linear Integrated Systems Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261 1 7 35 BOTTOM VIEW 2 6 22 X 20 MILS G1 S2 S1 G2 D2 D1 G1 S2 S1 G2 D1 D2 LS5905 LS5906 LS5907 LS5908 LS5909 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES LOW DRIFT | ∆V GS1-2 / ∆T|= 5µV/°C max. ULTRA LOW LEAKAGE I G = 150fA TYP. LOW PINCHOFF V P = 2V TYP. ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25 °C (unless otherwise noted) Maximum Temperatures Storage Temperature -65 ° to +150°C Operating Junction Temperature +150 °C Maximum Voltage and Current for Each Transistor NOTE 1 -V GSS Gate Voltage to Drain or Source 40V -V DSO Drain to Source Voltage 40V -I G(f) Gate Forward Current 10mA -I G Gate Reverse Current 10 µA Maximum Power Dissipation Device Dissipation @ Free Air - Total 40mW @ +125 °C ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise noted) SYMBOL CHARACTERISTICS LS5906 LS5907 LS5908 LS5909 LS5905 UNITS CONDITIONS | ∆V GS1-2 / ∆T| max. Drift vs. Temperature 5 10 20 40 40 µV/°CV DG = 10V, I D = 30 µA T A =-55 °C to +125°C |V GS1-2 | max. Offset Voltage 5 5 10 15 15 mV V DG =10V I D = 30 µA -I G max. Operating 1 1 1 1 3 pA -I G max. High Temperature 1 1 1 1 3 nA T A = +125 °C -I GSS max. At Full Conduction 2 2 2 2 5 pA V DS = 0V V GS = 20V -I GSS max. High Temperature 5 5 5 5 10 nA T A = +125 °C SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS BV GSS Breakdown Voltage 40 60 -- V V DS = 0 I D = 1nA BV GGO Gate-to-Gate Breakdown 40 -- -- V I G = 1nA I D = 0 I S = 0 TRANSCONDUCTANCE Y fss Full Conduction 70 300 500 µmho V DG = 10V V GS = 0 f= 1kHz Y fs Typical Operation 50 100 200 µmho V DG = 10V I D = 30 µA f= 1kHz |Y fs1-2 /Y fs | Mismatch -- 1 5 % DRAIN CURRENT I DSS Full Conduction 60 400 1000 µAV DG = 10V V GS = 0 |I DSS1-2 /I DSS | Mismatch at Full Conduction -- 2 5 % GATE VOLTAGE V GS (off) or V P Pinchoff Voltage 0.6 2 4.5 V V DS = 10V I D = 1nA V GS Operating Range -- -- 4 V V DS = 10V I D = 30 µA GATE CURRENT I GGO Gate-to-Gate Leakage -- 1 -- pA V GG =20V |
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