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FN4117A Datasheet(PDF) 1 Page - Linear Integrated Systems |
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FN4117A Datasheet(HTML) 1 Page - Linear Integrated Systems |
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1 / 1 page Linear Integrated Systems Linear Integrated Systems 4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 • FAX: (510) 353-0261 ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET LS4117, 4118, 4119 FEATURES LOW POWER I DSS <90 µA (2N4117) MINIMUM CIRCUIT LOADING I GSS <1 pA (2N4117A Series) ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25 °C (unless otherwise noted) Gate-Source or Gate-Drain Voltage (NOTE 1) -40V Gate-Current 50mA Total Device Dissipation (Derate 2mW/ °C to 175°C) 300mW Storage Temperature Range -65 °C to +175°C Lead Temperature (1/16" from case for 10 seconds) 255 °C ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise noted) 2N4117/A 2N4118 2N4119 FN4117/A 2N4118A 2N4119A SYMBOL CHARACTERISTICS MIN MAX MIN MAX MIN MAX UNITS CONDITIONS I GSS Gate Reverse Current -- -10 -- -10 -- -10 pA V GS = -20V V DS = 0 Standard only -- -25 -- -25 -- -25 nA I GSS Gate Reverse Current -- -1 -- -1 -- -1 pA V GS =-20V V DS = 0 "A" Series only -- -2.5 -- -2.5 -- -2.5 nA BV GSS Gate-Source Breakdown Voltage -40 -- -40 -- -40 -- I G =-1 µA V DS = 0 V GS(off) Gate-Source Cutoff Voltage -0.6 -1.8 -1 -3 -2 -6 V DS =10V I D = 1nA I DSS Saturation Drain Current 0.03 0.09 0.08 0.24 0.20 0.60 mA V DS =10V V GS = 0 (NOTE 2) FN4117/A 0.015 g fs Common-Source Forward 70 210 80 250 100 330 Transconductance (NOTE 2) g os Common-Source Output -- 3 -- 5 -- 10 Conductance C iss Common-Source Input -- 3 -- 3 -- 3 V DS = 10V V GS = 0 Capacitance C rss Common-Source Reverse -- 1.5 -- 1.5 -- 1.5 Transfer Capacitance 150 °C 150 °C V µmho pF f=1MHz f=1kHz NOTES: 1. Due to symmetrical geometry, these units may be operated with source and drain leads interchanged. 2. This parameter is measured during a 2 ms interval 100 ms after power is applied. (Not a JEDEC condition.) 1 2 3 4 Case G D S TO-72 Bottom View D S G C |
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