Linear Integrated Systems

ULTRA-HIGH INPUT IMPEDANCE

N-CHANNEL JFET

LS4117, 4118, 4119

FEATURES

LOW POWER

I

DSS

<90

MINIMUM CIRCUIT LOADING

I

GSS

<1 pA (2N4117A Series)

ABSOLUTE MAXIMUM RATINGS (NOTE 1)

@ 25

°C (unless otherwise noted)

Gate-Source or Gate-Drain Voltage (NOTE 1)

-40V

Gate-Current

50mA

Total Device Dissipation

(Derate 2mW/

°C to 175°C)

300mW

Storage Temperature Range

-65

°C to +175°C

Lead Temperature

(1/16" from case for 10 seconds)

255

°C

ELECTRICAL CHARACTERISTICS @ 25

2N4117/A

2N4118

2N4119

FN4117/A

2N4118A

2N4119A

SYMBOL

CHARACTERISTICS

MIN

MAX

MIN

MAX

MIN

MAX

UNITS

CONDITIONS

I

GSS

Gate Reverse Current

--

-10

--

-10

--

-10

pA

V

GS

= -20V V

DS

= 0

Standard only

--

-25

--

-25

--

-25

nA

I

GSS

Gate Reverse Current

--

-1

--

-1

--

-1

pA

V

GS

=-20V

V

DS

= 0

"A" Series only

--

-2.5

--

-2.5

--

-2.5

nA

BV

GSS

Gate-Source Breakdown Voltage

-40

--

-40

--

-40

--

I

G

=-1

µA

V

DS

= 0

V

GS(off)

Gate-Source Cutoff Voltage

-0.6

-1.8

-1

-3

-2

-6

V

DS

=10V

I

D

= 1nA

I

DSS

Saturation Drain Current

0.03

0.09

0.08

0.24

0.20

0.60

mA

V

DS

=10V

V

GS

= 0

(NOTE 2)

FN4117/A 0.015

g

fs

Common-Source Forward

70

210

80

250

100

330

Transconductance

(NOTE 2)

g

os

Common-Source Output

--

3

--

5

--

10

Conductance

C

iss

Common-Source Input

--

3

--

3

--

3

V

DS

= 10V

V

GS

= 0

Capacitance

C

rss

Common-Source Reverse

--

1.5

--

1.5

--

1.5

Transfer Capacitance

150

°C

150

°C

V

µmho

pF

f=1MHz

f=1kHz

NOTES:

1. Due to symmetrical geometry, these units may be operated with source and drain leads interchanged.

2. This parameter is measured during a 2 ms interval 100 ms after power is applied. (Not a JEDEC condition.)

1

2

3

4

Case

G

D

S

TO-72

Bottom View

D

S

G

C