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20150909

MIXG120W1200TEH

IXYS reserves the right to change limits, test conditions and dimensions.

tentative

Inverter IGBT

Ratings

Symbol

Definitions

Conditions

min.

typ.

max.

V

CES

collector emitter voltage

T

1200

V

V

GES

V

GEM

max. DC gate voltage

max. transient gate emitter voltage

-20

-30

+20

+30

V

V

I

C25

I

C80

I

C100

collector current

T

T

T

186

140

120

A

A

A

P

tot

total power dissipation

T

625

W

V

CE(sat)

collector emitter saturation voltage

I

T

T

1.7

2.0

2.0

V

V

V

GE(th)

gate emitter threshold voltage

I

T

6

7

V

I

CES

collector emitter leakage current

V

T

T

2

mA

mA

I

GES

gate emitter leakage current

V

500

nA

R

G

internal gate resistance

3.9

Ω

C

iss

C

oss

C

rss

input capacitance

output capacitance

reverse transfer (Miller) capacitance

V

nF

pF

pF

Q

g

Q

gs

Q

gd

total gate charge

gate source charge

gate drain (Miller) charge

V

nC

nC

nC

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

rec(off)

urn-on delay time

current rise time

turn-off delay time

current fall time

turn-on energy per pulse

turn-off energy per pulse

reverse recovery losses at turn-off

Inductive switching

V

T

V

80

40

250

80

6

5.8

ns

ns

ns

ns

mJ

mJ

mJ

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

rec(off)

turn-on delay time

current rise time

turn-off delay time

current fall time

turn-on energy per pulse

turn-off energy per pulse

reverse recovery losses at turn-off

Inductive switching

V

T

V

100

50

300

100

10.5

8.2

ns

ns

ns

ns

mJ

mJ

mJ

RBSOA

I

CM

reverse bias safe operating area

V

T

V

200

A

SCSOA

t

SC

I

SC

short circuit safe operating area

short circuit duration

short circuit duration

V

V

T

non-repetitive

600

10

μs

A

R

thJC

R

thJH

thermal resistance junction to case

thermal resistance junction to heatsink

with heatsink compound; IXYS test setup

0.38

0.24

K/W

K/W