Electronic Components Datasheet Search |
|
LS843 Datasheet(PDF) 1 Page - Linear Integrated Systems |
|
LS843 Datasheet(HTML) 1 Page - Linear Integrated Systems |
1 / 2 page Linear Integrated Systems Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261 1 7 35 BOTTOM VIEW 2 6 31 X 32 MILS D1 G1 S2 S1 G2 D2 G1 S2 S1 G2 D1 D2 FEATURES ULTRA LOW NOISE e n = 3nV/ √Hz TYP. LOW LEAKAGE I G = 15pA TYPs. LOW DRIFT | ∆V GS1-2 / ∆T|= 5µV/°C max. ULTRA LOW OFFSET VOLTAGE IV GS1-2 I= 1mV max. ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25 °C (unless otherwise noted) Maximum Temperatures Storage Temperature -65 ° to +150°C Operating Junction Temperature +150 °C Maximum Voltage and Current for Each Transistor NOTE 1 -V GSS Gate Voltage to Drain or Source 60V -V DSO Drain to Source Voltage 60V -I G(f) Gate Forward Current 50mA Maximum Power Dissipation Device Dissipation @ Free Air - Total 400mW @ +125 °C ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise noted) SYMBOL CHARACTERISTICS LS843 LS844 LS845 UNITS CONDITIONS | ∆V GS1-2 / ∆T| max. Drift vs. Temperature 5 10 25 µV/°C V DG = 10V I D = 500 µA T A = -55 °C to +125°C |V GS1-2 | max. Offset Voltage 1 5 15 mV V DG = 10V I D = 500 µA LS843 LS844 LS845 ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS BV GSS Breakdown Voltage 60 -- -- V V DS = 0 I D = 1nA BV GGO Gate-to-Gate Breakdown 60 -- -- V I G = 1nA I D = 0 I S = 0 TRANSCONDUCTANCE Y fss Full Conduction 1500 -- -- µmho V DG = 15V V GS = 0 f= 1kHz Y fs Typical Conduction 1000 1500 -- µmho V DG = 15V I D = 500 µA |Y fs1-2 /Y fs | Mismatch -- 0.6 3 % DRAIN CURRENT I DSS Full Conduction 1.5 5 15 mA V DG = 15V V GS = 0 |I DSS1-2 /I DSS | Mismatch at Full Conduction -- 1 5 % GATE VOLTAGE V GS (off) or V P Pinchoff Voltage 1 -- 3.5 V V DS = 15V I D = 1nA V GS Operating Range 0.5 -- 3.5 V V DS = 15V I D = 500 µA GATE CURRENT -I G Operating -- 15 50 pA V DG = 15V I D = 500 µA -I G High Temperature -- -- 50 nA V DG = 15V I D = 500 µAT A = +125 °C -I G Reduced VDG -- 5 30 pA V DG = 3V I D = 500 µA -I GSS At Full Conduction -- -- 100 pA V DG = 15V V DS = 0 |
Similar Part No. - LS843 |
|
Similar Description - LS843 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |