LMP2012QML

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SNOSAU5H – MARCH 2007 – REVISED APRIL 2013

LMP2012 AS ADC INPUT AMPLIFIER

The LMP2012 is a great choice for an amplifier stage immediately before the input of an ADC (Analog-to-Digital

Converter), whether AC or DC coupled. See Figure 8 and Figure 9. This is because of the following important

characteristics:

A)

Very low offset voltage and offset voltage drift over time and temperature allow a high closed-loop gain

setting without introducing any short-term or long-term errors. For example, when set to a closed-loop gain

of 100 as the analog input amplifier for a 12-bit A/D converter, the overall conversion error over full

operation temperature and 30 years life of the part (operating at 50°C) would be less than 5 LSBs.

B)

Fast large-signal settling time to 0.01% of final value (1.4

sampling rate.

C)

No flicker (1/f) noise means unsurpassed data accuracy over any measurement period of time, no matter

how long. Consider the following op amp performance, based on a typical low-noise, high-performance

commercially-available device, for comparison:

Op amp flatband noise = 8nV/

√Hz

1/f corner frequency = 100 Hz

Measurement time = 100 sec

Bandwidth = 2 Hz

compared to about 594

has no 1/f contribution. If the measurement time is increased from 100 seconds to 1 hour, the

596

μV when LMP2012 is used) mainly because the LMP2012 accuracy is not compromised by increasing

the observation time.

D)

Rail-to-Rail output swing maximizes the ADC dynamic range in 5-Volt single-supply converter applications.

Below are some typical block diagrams showing the LMP2012 used as an ADC amplifier (Figure 8 and

Figure 9).

Figure 9.

RADIATION ENVIRONMENTS

Careful consideration should be given to environmental conditions when using a product in a radiation

environment.

TOTAL IONIZING DOSE

Radiation hardness assured (RHA) products are those part numbers with a total ionizing dose (TID) level

specified in the Ordering Information table on the front page. Testing and qualification of these products is done

on a wafer level according to MIL-STD-883G, Test Method 1019.7, Condition A and the “Extended room

temperature anneal test” described in section 3.11 for application environment dose rates less than 0.082

rad(Si)/s. Wafer level TID data are available with lot shipments.

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