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LMK00101 Datasheet(PDF) 3 Page - Texas Instruments

Part # LMK00101
Description  Ultra-low Jitter LVCMOS Fanout Buffer/Level Translator
Download  19 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

LMK00101 Datasheet(HTML) 3 Page - Texas Instruments

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LMK00101
www.ti.com
SNAS572C – JANUARY 2012 – REVISED MAY 2013
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS
(1) (2) (3)
Parameter
Symbol
Ratings
Units
Core Supply Voltage
Vdd
-0.3 to 3.6
V
Output Supply Voltage
Vddo
-0.3 to 3.6
V
Input Voltage
VIN
-0.3 to Vdd + 0.3
V
Storage Temperature Range
TSTG
-65 to 150
°C
Lead Temperature (solder 4 s)
TL
+260
°C
Junction Temperature
TJ
+125
°C
(1)
"Absolute Maximum Ratings" indicate limits beyond which damage to the device may occur, including inoperability and degradation of
device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or
other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating
Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions.
(2)
This device is a high performance integrated circuit with ESD handling precautions. Handling of this device should only be done at ESD
protected work stations. The device is rated to a HBM-ESD of > 2.5 kV, a MM-ESD of > 250 V, and a CDM-ESD of > 1 kV.
(3)
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Typ
Max
Units
Ambient Temperature
TA
-40
25
85
°C
Core Supply Voltage
Vdd
2.375
3.3
3.45
V
Output Supply Voltage (1)
Vddo
1.425
3.3
Vdd
V
(1)
Vddo should be less than or equal to Vdd (Vddo ≤ Vdd)
PACKAGE THERMAL RESISTANCE
32-Lead WQFN
Package
Symbols
Ratings
Units
Thermal resistance from junction to ambient
θJA
50
° C/W
on 4-layer Jedec board (1)
Thermal resistance from junction to case
θJC (DAP)
20
° C/W
(2)
(1)
Specification assumes 5 thermal vias connect to die attach pad to the embedded copper plane on the 4-layer Jedec board. These vias
play a key role in improving the thermal performance of the QFN. For best thermal dissipation it is recommended that the maximum
number of vias be used on the board layout.
(2)
Case is defined as the DAP (die attach pad).
Copyright © 2012–2013, Texas Instruments Incorporated
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