Linear Integrated Systems

4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 • FAX: (510) 353-0261

LIMITS

SYMBOL

CHARACTERISTICS

MIN.

MAX.

UNITS

CONDITIONS

Y

fs1

/Y

fs2

Forward Transconductance Ratio

0.90

1.0

V

DS

= -15 V

I

D

= -500

µA

f=1kHz

V

GS1-2

Gate Source Threshold Voltage Differential

--

100

mV

V

DS

= -15 V

I

D

= -500

µA

∆V

GS1-2

/

∆T Gate Source Threshold Voltage Differential

--

100

µV/°CV

DS

= -15 V

I

A

= -500

µA

Change with Temperature

T

A

= -55

°C to = +25°C

MATCHING CHARACTERISTICS 3N165

90%

Switching Times Test Circuit

≤

≥

≤

V

DD

1

2

OUT

V

R

R

50

Switching Times Test Circuit

t

10%

10%

10%

10%

r

off

t

INPUT PULSE

Rise Time 2ns

Pulse Width 200ns

SAMPLING SCOPE

T 0.2ns

C

2pF

R

10M

r

IN

IN

TYPICAL SWITCHING WAVEFORM

≥

≤

Ω

NOTES:

1. MOS field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static

charge. To avoid possible damage to the device while wiring, testing, or in actual operation, follow these procedures:

To avoid the build-up of static charge, the leads of the devices should remain shorted together with a metal ring except when

being tested or used. Avoid unnecessary handling. Pick up devices by the case instead of the leads. Do not insert or remove

devices from circuits with the power on, as transient voltages may cause permanant damage to the devices.

2. Per transistor.

3. Devices must mot be tested at

±125V more than once, nor for longer than 300ms.

4. For design reference only, not 100% tested.

Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress

ratings only and functional operation of the device at these or any other conditions above those indicated in the operational

sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect

device reliability.