SN65C3221, SN75C3221

3V TO 5.5V SINGLECHANNEL RS232 COMPATIBLE LINE DRIVER/RECEIVER

SLLS351E − APRIL 2002 − REVISED OCTOBER 2004

4

POST OFFICE BOX 655303

DRIVER SECTION

electrical characteristics over recommended ranges of supply voltage and operating free-air

temperature (unless otherwise noted) (see Note 4 and Figure 6)

PARAMETER

TEST CONDITIONS

MIN

TYP†

MAX

UNIT

VOH

High-level output voltage

DOUT at RL = 3 kΩ to

GND,

DIN = GND

5

5.4

V

VOL

Low-level output voltage

DOUT at RL = 3 kΩ to

GND,

DIN = VCC

−5

−5.4

V

IIH

High-level input current

VI = VCC

±0.01

±1

µA

IIL

Low-level input current

VI at GND

±0.01

±1

µA

IOS

Short-circuit output current‡

VCC = 3.6 V,

VO = 0 V

±35

±60

mA

IOS

Short-circuit output current‡

VCC = 5.5 V,

VO = 0 V

±35

±90

mA

ro

Output resistance

VCC, V+, and V− = 0 V,

VO = ±2 V

300

10M

Ω

Ioff

Output leakage current

FORCEOFF = GND

VO = ±12 V,

VCC = 3 V to 3.6 V

±25

µA

Ioff

Output leakage current

FORCEOFF = GND

VO = ±10 V,

VCC = 4.5 V to 5.5 V

±25

µA

† All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.

‡ Short-circuit durations should be controlled to prevent exceeding the device absolute power-dissipation ratings, and not more than one output

should be shorted at a time.

NOTE 4: Test conditions are C1−C4 = 0.1

µF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 µF, C2−C4 = 0.33 µF at VCC = 5 V ± 0.5 V.

switching characteristics over recommended ranges of supply voltage and operating free-air

temperature (unless otherwise noted) (see Note 4 and Figure 6)

PARAMETER

TEST CONDITIONS

MIN

TYP†

MAX

UNIT

Maximum data rate

CL = 1000 pF

250

Maximum data rate

(see Figure 1)

RL = 3 kΩ

CL = 250 pF,

VCC = 3 V to 4.5 V

1000

kbit/s

(see Figure 1)

RL = 3 kΩ

CL = 1000 pF,

VCC = 4.5 V to 5.5 V

1000

kbit/s

tsk(p)

Pulse skew§

CL = 150 pF to 2500 pF

RL = 3 kΩ to 7 kΩ,

See Figure 2

100

ns

SR(tr)

Slew rate,

transition region

(see Figure 1)

VCC = 3.3 V,

RL = 3 kΩ to 7 kΩ

CL = 150 pF to 1000 pF

18

150

V/

µs

† All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.

§ Pulse skew is defined as |tPLH − tPHL| of each channel of the same device.

NOTE 4: Test conditions are C1−C4 = 0.1

µF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 µF, C2−C4 = 0.33 µF at VCC = 5 V ± 0.5 V.

ESD protection

TERMINAL

TEST CONDITIONS

TYP

UNIT

NAME

NO.

TEST CONDITIONS

TYP

UNIT

DOUT

13

HBM

±15

kV