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P4C1024-17J3C Datasheet(PDF) 3 Page - Pyramid Semiconductor Corporation |
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P4C1024-17J3C Datasheet(HTML) 3 Page - Pyramid Semiconductor Corporation |
3 / 8 page P4C1024 Page 3 of 14 Document # SRAM124 REV A DATA RETENTION CHARACTERISTICS (P4C1024L, Military Temperature Only) Typ.* Max Symbol Parameter Test Condition Min V CC=VCC=Unit 2.0V 3.0V 2.0V 3.0V V DR V CC for Data Retention 2.0 V I CCDR Data Retention Current 50 200 400 600 µA t CDR Chip Deselect to ns Data Retention Time t R † Operation Recovery Time t RC § ns *T A = +25°C §t RC = Read Cycle Time †This parameter is guaranteed but not tested. *V CC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE1 = VIL, CE2 = VIH, OE = VIH POWER DISSIPATION CHARACTERISTICS VS. SPEED DATA RETENTION WAVEFORM CE 1 ≥ VCC – 0.2V or CE 2 ≤ 0.2V, VIN ≥ VCC – 0.2V or V IN ≤ 0.2V Symbol Parameter Temperature Range -15 -20 -25 -35 -45 -55 -70 -85 -100 -120 Unit Commercial 190 160 150 145 N/A N/A N/A N/A N/A N/A mA Industrial N/A 175 165 160 155 N/A N/A N/A N/A N/A mA Military N/A 150 140 135 130 125 115 110 105 100 mA Dynamic Operating Current* ICC |
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