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M11B416256A Datasheet(PDF) 9 Page - Elite Semiconductor Memory Technology Inc.

Part # M11B416256A
Description  256 K x 16 DRAM EDO PAGE MODE
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Manufacturer  ESMT [Elite Semiconductor Memory Technology Inc.]
Direct Link  http://www.esmt.com.tw/index.asp
Logo ESMT - Elite Semiconductor Memory Technology Inc.

M11B416256A Datasheet(HTML) 9 Page - Elite Semiconductor Memory Technology Inc.

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EliteMT
M11B416256A
Elite Memory Technology Inc
Publication Date : Feb. 2004
Revision : 1.9
9/15
*NOTE : 1. tOFF1 is referenced from the rising edge of RAS or CAS , whichever occurs last.
2.
tPC can be measured from falling edge of CAS to falling edge of CAS , or from rising edge of CAS to rising
edge of CAS . Both measurements must meet the tPC specification.
RA S
V IH
V IL
CA SL , C AS H
V IH
V IL
V IH
V IL
AD D R
V IH
V IL
WE
V I/O H
V I/O L
I/ O
V IH
V IL
OE
t RW C
t RA S
t RP
ROW
CO L U M N
RO W
t CRP
t CS H
t RS H
t CA S
t CL C H
OP E N
t DH
t OF F 2
t CL Z
t CA C
t RCS
t RA C
t AA
t AS R
t RA H
t AS C
t CA H
t RA D
t RA L
t AR
t RC D
t CW L
RA S
CA SL ,C A S H
AD D R
t RP
ROW
t CRP
t CP
t CA S , t CL CH
t RA H
t AS C
t CA H
t RA D
t AR
t RC D
WE
OE
DON'T CARE
UNDEFINED
V IH
V IL
V IH
V IL
V IH
V IL
V IH
V IL
V OH
V OL
V IH
V IL
I/ O
t RW L
t WP
t AW D
t RW D
t CW D
VA L I D D OU T
t DS
t OEH
t OA C
RO W
t AS R
t CA H
t AS C
t CA H
t AS C
t CS H
CO L U M N
t CP
t PC (N O T E 2 )
CO L U M N
t RA L
t CA S , t CL CH
t RS H
t CP
CO L U M N
t RCS
t RR H
t RC H
VAL I D D A T A
VAL I D
DA T A
t CA C
t CL Z
t RA C
t AA
t CA C
t CO H
t AC P
t AA
t CA C
t CL Z
t AC P
t AA
V A L I D DA T A
OP E N
NO T E 1
t OF F 1
OP E N
t OA C
t OE S
t OF F 2
t OE H C
t OA C
t OE S
t OE P
t OF F 2
t RA S C
VA LI D D IN
t CA S , t CL CH
READ WRITE CYCLE
(LATE WRITE and READ-MODIFY-WRITE CYCLES)
EDO-PAGE-MODE READ CYCLE


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