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HBFP-0420-TR2 Datasheet(PDF) 4 Page - Agilent(Hewlett-Packard)

Part # HBFP-0420-TR2
Description  High Performance Isolated Collector Silicon Bipolar Transistor
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Manufacturer  HP [Agilent(Hewlett-Packard)]
Direct Link  http://www.home.agilent.com
Logo HP - Agilent(Hewlett-Packard)

HBFP-0420-TR2 Datasheet(HTML) 4 Page - Agilent(Hewlett-Packard)

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HBFP-0420 Typical Scattering Parameters,
V
CE = 2 V, IC = 15 mA, TC = 25°C
Freq.
S11
S21
S12
S22
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.481
-22.1
29.1
28.438
166.1
-43.0
0.007
82.3
0.959
-10.5
0.5
0.437
-91.4
26.0
19.969
124.7
-31.2
0.027
60.7
0.702
-41.4
0.9
0.416
-131.0
22.6
13.526
101.9
-28.2
0.039
53.4
0.500
-57.2
1.0
0.414
-138.0
21.9
12.378
97.8
-27.7
0.041
52.9
0.465
-59.6
1.5
0.415
-163.4
18.7
8.619
81.9
-25.5
0.053
49.6
0.341
-69.8
1.8
0.418
-174.6
17.2
7.254
74.2
-24.4
0.060
47.9
0.292
-74.4
2.0
0.421
178.9
16.3
6.549
69.7
-23.7
0.065
46.6
0.269
-77.6
2.5
0.428
165.4
14.4
5.262
59.3
-22.3
0.077
42.9
0.226
-84.1
3.0
0.435
153.6
12.9
4.418
49.9
-21.0
0.089
38.8
0.196
-91.1
3.5
0.439
143.2
11.6
3.811
41.0
-19.9
0.101
34.1
0.177
-96.8
4.0
0.442
133.3
10.5
3.362
32.4
-18.9
0.113
29.0
0.163
-102.1
4.5
0.447
123.7
9.6
3.024
23.9
-18.1
0.125
23.7
0.152
-107.2
5.0
0.455
114.1
8.8
2.749
15.4
-17.3
0.137
17.9
0.138
-113.4
5.5
0.467
104.6
8.0
2.522
6.8
-16.6
0.148
11.8
0.120
-121.1
6.0
0.484
95.5
7.3
2.327
-1.8
-16.0
0.159
5.4
0.100
-131.4
6.5
0.504
86.0
6.7
2.163
-10.4
-15.4
0.169
-1.0
0.077
-148.2
7.0
0.527
76.7
6.1
2.014
-18.9
-14.9
0.179
-7.6
0.059
-178.2
7.5
0.552
68.0
5.5
1.880
-27.4
-14.5
0.188
-14.3
0.060
144.1
8.0
0.572
60.4
4.9
1.765
-35.5
-14.1
0.197
-20.6
0.077
116.6
8.5
0.590
53.3
4.4
1.658
-43.6
-13.8
0.205
-27.1
0.096
100.7
9.0
0.604
46.4
3.9
1.565
-51.6
-13.4
0.213
-33.6
0.112
89.0
9.5
0.616
39.2
3.4
1.484
-59.6
-13.1
0.221
-40.3
0.123
77.9
10.0
0.630
31.4
3.0
1.406
-67.7
-12.9
0.228
-47.2
0.134
66.5
HBFP-0420 Noise Parameters: V
CE = 2 V, IC = 15 mA
Freq.
Fmin
Γ
opt
RN/50
Ga
GHz
dB
Mag
Ang
dB
0.9
1.57
0.033
-135.5
8.0
23.88
1.0
1.58
0.054
-151.8
7.8
23.04
1.5
1.63
0.169
-155.2
6.7
19.79
1.8
1.67
0.252
-148.1
6.3
18.34
2.0
1.74
0.234
-158.3
6.4
17.52
2.5
1.72
0.306
-149.2
6.1
15.71
3.0
1.76
0.343
-142.2
6.5
14.24
3.5
1.84
0.365
-133.5
7.7
12.97
4.0
1.89
0.383
-124.4
9.4
11.89
4.5
1.97
0.407
-115.6
11.5
11.01
5.0
2.03
0.431
-106.3
14.1
10.22
5.5
2.15
0.463
-96.8
17.8
9.53
6.0
2.28
0.483
-87.3
22.9
8.89
6.5
2.36
0.513
-77.3
28.7
8.32
7.0
2.42
0.538
-67.8
35.5
7.79
7.5
2.54
0.560
-59.2
43.0
7.30
8.0
2.65
0.581
-51.4
51.7
6.85
8.5
2.83
0.602
-44.6
61.3
6.42
9.0
2.96
0.621
-37.2
71.0
5.99
9.5
3.10
0.640
-29.9
81.1
5.61
10.0
3.14
0.653
-21.8
90.5
5.23
S and noise parameters are measured
on a microstrip line made on
0.025 inch thick alumina carrier. The
input reference plane is at the end of
the base lead, the output reference
plane is at the end of the collector
lead. S and noise parameters include
the effect of four plated through via
holes connecting emitter landing pads
on the top of test carrier to the
microstrip ground plane on the
bottom side of the carrier. Two
0.020 inch diameter via holes are
placed within 0.010 inch from each
emitter lead contact point, one via on
each side of that point.


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