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LM4140BCMX-4.1 Datasheet(PDF) 4 Page - National Semiconductor (TI) |
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LM4140BCMX-4.1 Datasheet(HTML) 4 Page - National Semiconductor (TI) |
4 / 15 page LM4140 Electrical Charateristics (Continued) Unless otherwise specified, V IN = 3.0V for the LM4140-1.024 and LM4140-1.250, VIN = 5.0V for all other voltage options, VEN =V IN.COUT = 1µF (Note 4), ILOAD = 1mA, TA =TJ = 25˚C. Limits with standard typeface are for TA = 25˚C, and limits in boldface type apply over 0˚C to 70˚C temperature range. Symbol Parameter Conditions Min (Note 6) Typ (Note 5) Max (Note 6) Units Operating Voltage LM4140-1.024, LM4140-1.250 I L = 1 mA to 8 mA 1.8 5.5 V V IN-VREF Dropout Voltage (Note 9) LM4140-2.048, LM4140-2.500 I L = 1 mA 20 40 45 mV I L = 8 mA 160 235 400 LM4140-4.096 I L = 1 mA 20 40 45 I L = 8 mA 195 270 490 V N Output Noise Voltage (Note 10) 0.1 Hz to 10 Hz 2.2 µV PP I S(ON) Supply Current I LOAD =0 mA µA All other voltage options 230 320 375 4.096V Option 265 350 400 I S(OFF) Supply Current V Enable < 0.4V .01 1 µA V H Logic High Input Voltage 0.8V IN V I H Logic High Input Current 2 nA V L Logic Low Input Voltage 0.4 V I L Logic Low Input Current 1 nA I SC Short Circuit Current 8.5 20 35 40 mA Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is in- tended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see Electrical Characteristics. The guar- anteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. Note 2: Without PCB copper enhancements. The maximum power dissipation must be de-rated at elevated temperatures and is limited by TJMAX (maximum junction temperature), θJ-A (junction to ambient thermal resistance) and TA (ambient temperature). The maximum power dissipation at any temperature is: PDissMAX =(TJMAX −TA)/θJ-A up to the value listed in the Absolute Maximum Ratings. The θJ-A for the SO-8 package is 160˚C/W. Note 3: The human body model is a 100 pF capacitor discharged through a 1.5 k Ω resistor into each pin. The machine model is a 200 pF capacitor discharged di- rectly into each pin. Note 4: For proper operation, a 1µF capacitor is required between the output pin and the GND pin of the device. (See Application Section for details) Note 5: Typical numbers are at 25˚C and represent the most likely parametric norm. Note 6: Limits are 100% production tested at 25˚C. Limits over the operating temperature range are guaranteed through correlation using Statistical Quality Control (SQC) methods. The limits are used to calculate National’s Average Outgoing Quality Level (AOQL). Note 7: High temperature and mechanical stress associated with PCB assembly can have significant impact on the initial accuracy of the LM4140 and may create significant shifts in VREF. See Application Hints section regarding accuracy and PCB layout consideration. Note 8: Thermal hysteresis is defined as the changes in +25˚C output voltage before and after the cycling of the device from 0˚C to 70˚C. Note 9: Dropout voltage is defined as the minimum input to output differential voltage at which the output voltage drops by 0.5% below the value measured with VIN = 3.0V for the LM4140-1.024 and LM4140-1.250, VIN = 5.0V for all other voltage options. Note 10: The output noise is based on 1.024V option. Output noise is linearly proportional to VREF. www.national.com 4 |
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