SI3447BDV datasheet(2/5 Pages) VISHAY

Part #	SI3447BDV

Description	P-Channel 12-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si3447BDV

Vishay Siliconix

www.vishay.com

2

Document Number: 72020

S-40424—Rev. B, 15-Mar-04

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = −250 mA

−0.45

1

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "8 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = −12 V, VGS = 0 V

−1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = −12 V, VGS = 0 V, TJ = 85_C

−5

mA

On-State Drain Currenta

ID(on)

VDS = −5 V, VGS = −4.5 V

−20

A

VGS = −4.5 V, ID = −6.0 A

0.033

0.040

Drain-Source On-State Resistancea

rDS(on)

VGS = −2.5 V, ID = −5.2 A

0.044

0.053

W

DS(on)

VGS = −1.8 V, ID = −2.0 A

0.060

0.072

Forward Transconductancea

gfs

VDS = −5 V, ID = −6.0 A

15

S

Diode Forward Voltagea

VSD

IS = −1.7 A, VGS = 0 V

−0.7

−1.2

V

Dynamicb

Total Gate Charge

Qg

9.3

14

Gate-Source Charge

Qgs

VDS = −6 V, VGS = −4.5 V, ID = −6.0 A

1.5

nC

Gate-Drain Charge

Qgd

2.6

Turn-On Delay Time

td(on)

20

30

Rise Time

tr

VDD = −6 V, RL = 6 W

46

70

Turn-Off Delay Time

td(off)

VDD = −6 V, RL = 6 W

ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W

62

95

ns

Fall Time

tf

62

95

Source-Drain Reverse Recovery Time

trr

IF = −1.7 A, di/dt = 100 A/ms

40

80

Notes

a.

Pulse test; pulse width v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

4

8

12

16

20

0.0

0.5

1.0

1.5

2.0

2.5

0

4

8

12

16

20

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

VGS = 5 thru 2.5 V

TC = −55_C

125_C

1.5 V

25_C

Output Characteristics

Transfer Characteristics

VDS − Drain-to-Source Voltage (V)

VGS − Gate-to-Source Voltage (V)

1 V

2 V

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