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SP6648ER Datasheet(PDF) 2 Page - Exar Corporation |
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SP6648ER Datasheet(HTML) 2 Page - Exar Corporation |
2 / 16 page 2 Date: 6/7/06 Rev B SP6648 Ultra-low Quiescent Current, High Efficiency Boost Regulator © 2006 Sipex Corporation LX, Vo, VBATT , LBON, FB to GND pin ................................ -0.3 to 6.0V SHDN, LBI ........................................................... -0.3V to VBATT +1.0V Vo, GND, LX Current ....................................................................... 2A Reverse VBATT Current .............................................................. 220mA Forward VBATT Current .............................................................. 500mA Storage Temperature .................................................. -65 °C to 150°C PARAMETER MIN TYP MAX UNITS ♦ CONDITIONS Input Voltage Operating Range, VBATT 0.7 4.5 V ♦ After Startup Output Voltage Range, VOUT 2.5 5.5 V ♦ Start-up Input Voltage, VBATT 0.85 1.1 V ♦ RLOAD = 3kΩ Under Voltage Lock-out/UVLO 0.5 0.61 0.7 V ♦ Output Voltage, VO 3.12 3.30 3.48 V ♦ Internal Feedback Divider Quiescent Current into VO, IQO 12 25 μA ♦ VOUT = 3.3V, VFB = 1.5V, Toggle SHDN Quiescent Current into VBATT, IQB 250 750 nA ♦ VOUT = 3.3V, VFB = 1.5V Shutdown Current into VO, ISDO 1 500 nA ♦ VSHDN = 0.0V Shutdown Current into VBATT, ISDB 250 750 nA ♦ VSHDN = 0.0V, VBATT = 2.6V Efficiency 84 % VBATT = 1.3V, IOUT = 100mA, RLIM =2kΩ 92 % VBATT = 2.6V, IOUT = 200mA, RLIM =2kΩ Inductor Current Limit, IPK = 1600/RLIM 650 800 1000 mA ♦ RLIM = 2kΩ 1300 1600 2000 mA ♦ RLIM = 1kΩ 100 mA VBATT = 1.3V, RLIM = 4kΩ Output Current 200 mA VBATT = 2.6V, RLIM = 4kΩ 150 mA VBATT = 1.3V, RLIM =2kΩ 400 mA VBATT = 2.6V, RLIM =2kΩ Minimum Off-Time Constant KOFF 0.5 1.0 1.5 V*μs ♦ KOFF ≤ TOFF (VOUT- VBATT) Maximum On-Time Constant KON 2.5 4.0 5.5 V*μs ♦ KON ≥ TON (VBATT) Enable Valid to Output Stable 300 500 μsILOAD = 1mA NMOS Switch Resistance 0.30 0.6 Ω♦ INMOS = 100mA PMOS Switch Resistance 0.30 0.6 Ω♦ IPMOS = 100mA FB Set Voltage, VFB 1.19 1.25 1.31 V ♦ External feedback FB Input Current 1 100 nA ♦ VFB =1.3V LBI Falling Trip Voltage 0.56 0.61 0.66 V ♦ LBI Hysteresis 25 mV Low Output Voltage for LBON, VOL 0.4 V ♦ VBATT = 1.3V, ISINK = 1mA Leakage current for LBON 1 μA ♦ VBATT = 1.3V, VLBON = 3.3V SHDN Input Voltage, Note 1 VIL 0.25 ♦ VBATT = 1.3V VIH 1.0 V ♦ VBATT = 1.3V VIL 0.5 ♦ VBATT = 2.6V VIH 2.0 ♦ VBATT = 2.6V SHDN Input Current 1 100 nA ♦ LX Pin Leakage 3 μA ELECTRICAL SPECIFICATIONS VBATT =VSHDN = 2.6V, VFB=0.0V, ILOAD = 0mA, TAMB = -40°C to +85°C, VOUT = +3.3V, typical values at 27°C unless otherwise noted. The ♦ denotes the specifications which apply over full operating temperature range -40°C to +85°C, unless otherwise specified. Operating Temperature ................................................ -40°C to +85°C ESD Rating ........................................................................ 1.5kV HBM These are stress ratings only and functional operation of the device at these ratings or any other above those indicated in the operation sections of the specifications below is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability. ABSOLUTE MAXIMUM RATINGS Note 1: SHDN must transition faster than 1V/100mS for proper operation. |
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