2

Date: 6/7/06 Rev B

SP6648 Ultra-low Quiescent Current, High Efficiency Boost Regulator

© 2006 Sipex Corporation

Vo, GND, LX Current ....................................................................... 2A

Storage Temperature .................................................. -65 °C to 150°C

PARAMETER

MIN

TYP

MAX

UNITS

♦

CONDITIONS

0.7

4.5

V

♦

After Startup

2.5

5.5

V

♦

0.85

1.1

V

♦

Under Voltage Lock-out/UVLO

0.5

0.61

0.7

V

♦

3.12

3.30

3.48

V

♦

Internal Feedback Divider

12

25

μA

♦

250

750

nA

♦

1

500

nA

♦

250

750

nA

♦

Efficiency

84

%

92

%

650

800

1000

mA

♦

1300

1600

2000

mA

♦

100

mA

Output Current

200

mA

150

mA

400

mA

0.5

1.0

1.5

V*μs

♦

2.5

4.0

5.5

V*μs

♦

Enable Valid to Output Stable

300

500

NMOS Switch Resistance

0.30

0.6

Ω♦

PMOS Switch Resistance

0.30

0.6

Ω♦

1.19

1.25

1.31

V

♦

External feedback

FB Input Current

1

100

nA

♦

LBI Falling Trip Voltage

0.56

0.61

0.66

V

♦

LBI Hysteresis

25

mV

0.4

V

♦

Leakage current for LBON

1

μA

♦

SHDN Input Voltage, Note 1

0.25

♦

1.0

V

♦

0.5

♦

2.0

♦

SHDN Input Current

1

100

nA

♦

LX Pin Leakage

3

μA

ELECTRICAL SPECIFICATIONS

otherwise noted. The ♦ denotes the specifications which apply over full operating temperature range -40°C to +85°C, unless

otherwise specified.

Operating Temperature ................................................ -40°C to +85°C

ESD Rating ........................................................................ 1.5kV HBM

These are stress ratings only and functional operation of the device at

these ratings or any other above those indicated in the operation sections

of the specifications below is not implied. Exposure to absolute maximum

rating conditions for extended periods of time may affect reliability.

ABSOLUTE MAXIMUM RATINGS

Note 1: SHDN must transition faster than 1V/100mS for proper operation.