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BQ24105 Datasheet(PDF) 5 Page - Texas Instruments |
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BQ24105 Datasheet(HTML) 5 Page - Texas Instruments |
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5 / 26 page  www.ti.com bq24100, bq24103 bq24105, bq24108 bq24113, bq24115 SLUS606C – JUNE 2004 – REVISED SEPTEMBER 2005 ELECTRICAL CHARACTERISTICS (continued) T J = 0°C to 125°C and recommended supply voltage range (unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Both rising and falling, tdg-TS Deglitch time for temperature fault, TS 20 30 40 ms 2-mV overdrive tRISE, tFALL = 100 ns VCC > VIN(min), VO(VTSB) TS bias output voltage 3.15 V I(VTSB) = 10 mA 0.1 µF ≤ CO(VTSB) ≤ 1 µF VCC > IN(min), VO(VTSB) TS bias voltage regulation accuracy –10% 10% I(VTSB) = 10 mA 0.1 µF ≤ CO(VTSB) ≤ 1 µF BATTERY RECHARGE THRESHOLD VRCH Recharge threshold voltage Below VOREG 75 100 125 mV/cell VI(BAT) < decreasing below threshold, tdg-RCH Deglitch time 20 30 40 ms tFALL = 100 ns 10-mV overdrive STAT1, STAT2, AND PG OUTPUTS VOL(STATx) Low-level output saturation voltage, STATx IO = 5 mA 0.5 V VOL(PG) Low-level output saturation voltage, PG IO = 10 mA 0.1 CE CMODE, CELLS INPUTS VIL Low-level input voltage IIL = 5 µA 0 0.4 V VIH High-level input voltage IIH = 20 µA 1.3 VCC TTC INPUT tPRECHG Precharge timer 1440 1800 2160 s tCHARGE Programmable charge timer range t(CHG) = C(TTC) × K(TTC) 25 572 minutes Charge timer accuracy 0.01 µF ≤ C (TTC) ≤ 0.18 µF -10% 10% KTTC Timer multiplier 2.6 min/nF CTTC Charge time capacitor range 0.01 0.22 µF VTTC_EN TTC enable threshold voltage V(TTC) rising 200 mV SLEEP COMPARATOR VCC ≤ VIBAT VCC ≤ VIBAT 2.3 V ≤ V I(OUT) ≤ VOREG, for 1 or 2 cells +5 mV +75 mV VSLP-ENT Sleep-mode entry threshold V VI(OUT) = 12.6 V, RIN = 1 kΩ VCC ≤ VIBAT VCC ≤ VIBAT bq24105/15(1) -4 mV +73 mV VSLP-EXIT Sleep-mode exit hysteresis, 2.3 V ≤ V I(OUT)≤ VOREG 40 160 mV VCC decreasing below threshold, tFALL = 100 ns, 10-mV overdrive, 5 µs PMOS turns off tdg-SLP Deglitch time for sleep mode VCC decreasing below threshold, tFALL = 100 ns, 10-mV overdrive, 20 30 40 ms STATx pins turn off UVLO VUVLO-ON IC active threshold voltage VCC rising 3.15 3.30 3.50 V IC active hysteresis VCC falling 120 150 mV PWM 7 V ≤ V CC ≤ VCC(max) 400 Internal P-channel MOSFET on-resistance 4.5 V ≤ V CC ≤ 7 V 500 m Ω 7 V ≤ V CC ≤ VCC(max) 130 Internal N-channel MOSFET on-resistance 4.5 V ≤ V CC ≤ 7 V 150 fOSC Oscillator frequency 1.1 MHz Frequency accuracy –9% 9% DMAX Maximum duty cycle 100% DMIN Minimum duty cycle 0% tTOD Switching delay time (turn on) 20 ns tsyncmin Minimum synchronous FET on time 60 ns Synchronous FET minimum current-off 50 400 mA threshold (2) (1) For bq24105 and bq24115 only. RIN is connected between IN and PGND pins and needed to ensure sleep entry. (2) N-channel always turns on for ~60 ns and then turns off if current is too low. 5 |
Similar Part No. - BQ24105 |
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Similar Description - BQ24105 |
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