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BUXD87IPAK Datasheet(PDF) 2 Page - STMicroelectronics |
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BUXD87IPAK Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 6 page THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 6.25 100 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICEV Collector Cut-off Current (VBE = -1.5V) VCE = 1000 V VCE = 1000 V Tj = 125 oC 100 1 µA mA IEBO Emitter Cut-off Current (IC = 0) VEB = 5 V 1 mA VCEO(sus) Collector-Emitter Sustaining Voltage IC = 100 mA 450 V VBEO Collector-Base Sustaining Voltage IC = 10 mA 5 V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 0.1 A IB = 0.01 A IC = 0.2 A IB = 0.02 A 0.8 1 V V VBE(sat) ∗ Base-Emitter Saturation Voltage IC = 0.2 A IB = 0.02 A 1 V hFE ∗ DC Current Gain IC = 50 mA VCE = 5 V IC = 40 mA VCE = 5 V 12 50 fT Transition Frequency IC = 50 mA VCE = 10 V f=1MHz 20 MHz ts tf RESISTIVE LOAD Storage Time Fall Time VCC = 250 V IC = 200 mA IB1 = 40 mA IB2= -80 mA tp = 20 µs 4.5 0.5 µs µs ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area Derating Curves BUXD87 2/6 |
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