SI4401DY datasheet(2/4 Pages) VISHAY

Part #	SI4401DY

Description	P-Channel 40-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si4401DY

Vishay Siliconix

New Product

www.vishay.com

2

Document Number: 71226

S-03452—Rev. C, 09-Apr-01

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = –250 mA

–1.0

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

VDS = –32 V, VGS = 0 V

–1

m

Zero Gate Voltage Drain Current

IDSS

VDS = –32 V, VGS = 0 V, TJ = 70_C

–10

mA

On-State Drain Currenta

ID(on)

VDS = –5 V, VGS = –10 V

–30

A

VGS = –10 V, ID = –10.5 A

0.013

0.0155

W

Drain-Source On-State Resistancea

rDS(on)

VGS = –4.5 V, ID = –8.7 A

0.0185

0.0225

W

Forward Transconductancea

gfs

VDS = –15 V, ID = –10.5 A

26

S

Diode Forward Voltagea

VSD

IS = –2.7 A, VGS = 0 V

–0.74

–1.1

V

Dynamicb

Total Gate Charge

Qg

37.5

50

Gate-Source Charge

Qgs

VDS = –15 V, VGS = –5 V, ID = –10.5 A

14.3

nC

Gate-Drain Charge

Qgd

10.7

Turn-On Delay Time

td(on)

17

30

Rise Time

tr

VDD = –15 V, RL = 15 W

18

30

Turn-Off Delay Time

td(off)

VDD = –15 V, RL = 15 W

ID ^ –1 A, VGEN = –10 V, RG = 6 W

122

190

ns

Fall Time

tf

55

85

Gate Resistance

Rg

3.8

W

Source-Drain Reverse Recovery Time

trr

IF = –2.1 A, di/dt = 100 A/ms

45

ns

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

10

20

30

40

50

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

0

10

20

30

40

50

0

2468

10

VGS = 10 thru 5 V

TC = 125_C

–55

_C

2 V

25

_C

Output Characteristics

Transfer Characteristics

VDS – Drain-to-Source Voltage (V)

VGS – Gate-to-Source Voltage (V)

4 V

3 V

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