DMTH6010SK3Q

Document number: DS38692 Rev. 1 - 2

2 of 7

www.diodes.com

June 2016

© Diodes Incorporated

DMTH6010SK3Q

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

60

V

Gate-Source Voltage

±20

V

Continuous Drain Current (Note 6)

16.3

13.6

A

Continuous Drain Current (Note 7)

70

49

A

Maximum Continuous Body Diode Forward Current (Note 6)

3

A

Pulsed Drain Current (10

μs Pulse, Duty Cycle = 1%)

80

A

Avalanche Current, L=0.1mH

20

A

Avalanche Energy, L=0.1mH

27.7

mJ

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 6)

3.1

W

Thermal Resistance, Junction to Ambient (Note 6)

47

°C/W

Total Power Dissipation (Note 7)

59

W

Thermal Resistance, Junction to Case (Note 7)

2.5

°C/W

Operating and Storage Temperature Range

-55 to +175

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

60

-

-

V

Zero Gate Voltage Drain Current

-

-

1

μA

Gate-Source Leakage

-

-

±100

nA

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

2

-

4

V

Static Drain-Source On-Resistance

-

5.4

8

m

Ω

Diode Forward Voltage

-

0.84

1.2

V

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

-

2841

-

pF

f = 1MHz

Output Capacitance

-

690

-

Reverse Transfer Capacitance

-

46

-

Gate Resistance

-

0.55

-

Ω

Total Gate Charge

-

38.1

-

nC

Gate-Source Charge

-

8.3

-

Gate-Drain Charge

-

9.3

-

Turn-On Delay Time

-

8.6

-

ns

Turn-On Rise Time

-

8.2

-

Turn-Off Delay Time

-

17.4

-

Turn-Off Fall Time

-

5.7

-

Body Diode Reverse Recovery Time

-

33.8

-

ns

Body Diode Reverse Recovery Charge

-

35.6

-

nC

Notes:

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Device mounted on infinite heat sink and measured by thermal couple attached on bottom heat sink of package.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.