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DMTH6010SK3Q Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMTH6010SK3Q Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 7 page DMTH6010SK3Q Document number: DS38692 Rev. 1 - 2 2 of 7 www.diodes.com June 2016 © Diodes Incorporated DMTH6010SK3Q Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) TA = +25°C TA = +70°C ID 16.3 13.6 A Continuous Drain Current (Note 7) TC = +25°C TC = +100°C ID 70 49 A Maximum Continuous Body Diode Forward Current (Note 6) IS 3 A Pulsed Drain Current (10 μs Pulse, Duty Cycle = 1%) IDM 80 A Avalanche Current, L=0.1mH IAS 20 A Avalanche Energy, L=0.1mH EAS 27.7 mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 6) PD 3.1 W Thermal Resistance, Junction to Ambient (Note 6) RJA 47 °C/W Total Power Dissipation (Note 7) PD 59 W Thermal Resistance, Junction to Case (Note 7) RJC 2.5 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +175 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 60 - - V VGS = 0V, ID = 1mA Zero Gate Voltage Drain Current IDSS - - 1 μA VDS = 48V, VGS = 0V Gate-Source Leakage IGSS - - ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) 2 - 4 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) - 5.4 8 m Ω VGS = 10V, ID = 20A Diode Forward Voltage VSD - 0.84 1.2 V VGS = 0V, IS = 20A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss - 2841 - pF VDS = 30V, VGS = 0V, f = 1MHz Output Capacitance Coss - 690 - Reverse Transfer Capacitance Crss - 46 - Gate Resistance Rg - 0.55 - Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge Qg - 38.1 - nC VDS = 30V, ID = 20A, VGS = 10V Gate-Source Charge Qgs - 8.3 - Gate-Drain Charge Qgd - 9.3 - Turn-On Delay Time tD(ON) - 8.6 - ns VDD = 30V, VGS = 10V, ID = 20A, RG = 3Ω Turn-On Rise Time tR - 8.2 - Turn-Off Delay Time tD(OFF) - 17.4 - Turn-Off Fall Time tF - 5.7 - Body Diode Reverse Recovery Time tRR - 33.8 - ns IF = 20A, di/dt = 100A/μs Body Diode Reverse Recovery Charge QRR - 35.6 - nC Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Device mounted on infinite heat sink and measured by thermal couple attached on bottom heat sink of package. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. |
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