DMT3006LFG

Document number: DS38252 Rev. 2 - 2

2 of 7

www.diodes.com

May 2016

© Diodes Incorporated

DMT3006LFG

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

30

V

Gate-Source Voltage

±

20

V

55.6

44.4

A

16.0

12.8

A

Maximum Continuous Body Diode Forward Current (Note 5)

2

A

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

80

A

Avalanche Current, L=0.1mH

25

A

Avalanche Energy, L=0.1mH

31

mJ

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 6)

27.8

W

Thermal Resistance, Junction to Case (Note 6)

4.5

°C/W

Thermal Resistance, Junction to Ambient (Note 5)

54

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

30

—

—

V

Zero Gate Voltage Drain Current

—

—

1

μA

Gate-Source Leakage

—

—

±100

nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

1.0

—

3.0

V

Static Drain-Source On-Resistance

—

4.8

6

m

Ω

—

6.9

10

Diode Forward Voltage

—

0.7

1.0

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

1,320

—

pF

f = 1.0MHz

Output Capacitance

—

490

—

Reverse Transfer Capacitance

—

77

—

Gate Resistance

—

1.6

—

Ω

—

10.6

—

nC

—

22.6

—

Gate-Source Charge

—

3.5

—

Gate-Drain Charge

—

3.5

—

Turn-On Delay Time

—

2.7

—

ns

Turn-On Rise Time

—

2.7

—

Turn-Off Delay Time

—

13.7

—

Turn-Off Fall Time

—

5.5

—

Body Diode Reverse Recovery Time

—

10.5

—

ns

Body Diode Reverse Recovery Charge

—

21.1

—

nC

Notes:

6. Thermal resistance from junction to soldering point (on the exposed drain pad).

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.