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K6X4008T1F-GB85 Datasheet(PDF) 2 Page - Samsung semiconductor |
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K6X4008T1F-GB85 Datasheet(HTML) 2 Page - Samsung semiconductor |
2 / 9 page K6X4008T1F Family CMOS SRAM Revision 1.0 September 2003 2 512K ×8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG ′s advanced full CMOS process technology. The families support various operating temperature range and have various pack- age types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. FEATURES • Process Technology: Full CMOS • Organization: 512K×8 • Power Supply Voltage: 2.7~3.6V • Low Data Retention Voltage: 2V(Min) • Three State Outputs • Package Type: 32-SOP-525, 32-TSOP2-400F/R 32-TSOP1-0813.4F PIN DESCRIPTION Name Function Name Function A0~A18 Address Inputs Vcc Power WE Write Enable Input Vss Ground CS Chip Select Input I/O1~I/O8 Data Inputs/Outputs OE Output Enable Input PRODUCT FAMILY 1. This parameter is measured in the voltage range of 3.0V~3.6V with 30pF test load. 2. This parameter is measured with 30pF test load. Product Family Operating Temperature Vcc Range Speed Power Dissipation PKG Type Standby (ISB1, Max) Operating (ICC2, Max) K6X4008T1F-B Commercial(0~70 °C) 2.7~3.6V 551)/702)/85ns 10 µA 25mA 32-SOP-525, 32-TSOP1-0813.4F 32-TSOP2-400F/R K6X4008T1F-F Industrial(-40~85 °C) 10 µA K6X4008T1F-Q Automotive(-40~125 °C) 702)/85ns 20 µA 32-SOP-525, 32-TSOP1-0813.4F 32-TSOP2-400F FUNCTIONAL BLOCK DIAGRAM 32-SOP (Forward) 32-TSOP2 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 VSS VCC A15 WE A13 A8 A9 A11 OE A10 CS I/O8 I/O7 I/O6 I/O5 I/O4 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32-TSOP2 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 VSS VCC A15 WE A13 A8 A9 A11 OE A10 CS I/O8 I/O7 I/O6 I/O5 I/O4 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 (Reverse) A18 A17 A17 A18 SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. Precharge circuit. Memory array I/O Circuit Column select Clk gen. Row select CS WE I/O1 Data cont Data cont OE I/O8 A11 A9 A8 A13 WE A17 A15 VCC A18 A16 A14 A12 A7 A6 A5 A4 OE A10 CS I/O8 I/O7 I/O6 I/O5 I/O4 VSS I/O3 I/O2 I/O1 A0 A1 A2 A3 (Forward) 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Control logic 32-STSOP1 Row Addresses Column Addresses |
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