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IXYH30N65B3D1 Datasheet(PDF) 2 Page - IXYS Corporation |
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IXYH30N65B3D1 Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 7 page IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYH30N65B3D1 IXYQ30N65B3D1 IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 Notes: 1. Pulse test, t 300μs, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V CE(clamp), TJ or RG. e P TO-247 Outline 1 2 3 Terminals: 1 - Gate 2 - Collector 3 - Emitted Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 1 2.2 2.54 .087 .102 A 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (T J = 25°C Unless Otherwise Specified) Min. Typ. Max. V F I F = 30A, VGE = 0V, Note 1 2.5 V T J = 150°C 1.4 V I rr T J = 150°C 23 A t rr T J = 150°C 133 ns R thJC 0.60 °C/W I F = 30A, VGE = 0V, -di F/dt = 500A/μs, VR = 400V ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. Symbol Test Conditions Characteristic Values (T J = 25°C Unless Otherwise Specified) Min. Typ. Max. g fs I C = 30A, VCE = 10V, Note 1 11 19 S C ies 1240 pF C oes V CE = 25V, VGE = 0V, f = 1MHz 172 pF C res 30 pF Q g(on) 45 nC Q ge I C = 30A, VGE = 15V, VCE = 0.5 • VCES 8 nC Q gc 23 nC t d(on) 17 ns t ri 38 ns E on 0.83 mJ t d(off) 87 ns t fi 33 ns E off 0.64 1.20 mJ t d(on) 17 ns t ri 40 ns E on 1.63 mJ t d(off) 106 ns t fi 93 ns E off 1.00 mJ R thJC 0.55 °C/W R thCS 0.25 °C/W Inductive load, T J = 25°C I C = 30A, VGE = 15V V CE = 400V, RG = 10 Note 2 Inductive load, T J = 150°C I C = 30A, VGE = 15V V CE = 400V, RG = 10 Note 2 TO-3P Outline 1 = Gate 2,4 = Collector 3 = Emitter |
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