IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYJ30N120C3D1

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

ISO TO-247 (IXYJ) OUTLINE

PINS:

1 = Gate

2 = Drain

3 = Source

4 = Isolated

Symbol Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

10

17

S

C

1640

pF

C

oes

V

140

pF

C

res

38

pF

Q

g(on)

69

nC

Q

ge

I

9

nC

Q

gc

34

nC

t

d(on)

19

ns

t

ri

40

ns

E

on

2.6

mJ

t

d(off)

130

ns

t

fi

88

ns

E

1.1

mJ

t

d(on)

19

ns

t

ri

52

ns

E

on

6.0

mJ

t

d(off)

156

ns

t

fi

140

ns

E

off

1.6

mJ

R

thJC

0.89 °C/W

R

thCS

0.21

°C/W

Inductive load, T

I

V

Note 2

Inductive load, T

I

V

Note 2

Notes:

1. Pulse test, t

 300μs, duty cycle, d  2%.

2. Switching times & energy losses may increase for higher V

(T

Characteristic Value

Symbol

Test Conditions

Min.

Typ.

Max.

V

F

3.00

V

T

1.75

V

I

RM

9

A

t

rr

195

ns

R

thJC

1.25 °C/W

I

T

V

T

I

Reverse Diode (FRED)