K4S161622E-TC70 datasheet(7/42 Pages) SAMSUNG

Part #	K4S161622E-TC70

Description	1M x 16 SDRAM

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Manufacturer	SAMSUNG [Samsung semiconductor]

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K4S161622E

CMOS SDRAM

Rev 1.1 Jan '03

1. Parameters depend on programmed CAS latency.

2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.

3. Assumed input rise and fall time (tr & tf)=1ns.

If tr & tf is longer than 1ns, transient time compensation should be considered,

i.e., [(tr + tf)/2-1]ns should be added to the parameter.

Note :

AC CHARACTERISTICS (AC operating conditions unless otherwise noted)

Parameter

Symbol

-55

-60

-70

-80

-10

Unit

Note

Min

Max

Min

Max

Min

Max

Min

Max

Min

Max

CLK cycle time

CAS Latency=3

tCC

5.5

1000

6

1000

7

1000

8

1000

10

1000

ns

1

CAS Latency=2

-

10

12

CLK to valid

output delay

CAS Latency=3

tSAC

-

5

-5.5

-

6

-

6

ns

1, 2

CAS Latency=2

-

6

-

6

-

6

-

6

-

8

Output data

tOH

2

-

2.5

-

2.5

-

2.5

-

2.5

-

ns

2

CLK high pulse

width

CAS Latency=3

tCH

2

-

2.5

-3-3-

3.5

-

ns

3

CAS Latency=2

3

CLK low pulse

width

CAS Latency=3

tCL

2

-

2.5

-3-3-

3.5

-

ns

3

CAS Latency=2

3

Input setup time

CAS Latency=3

tSS

1.5

-

1.5

-

1.75

-2-

2.5

-

ns

3

CAS Latency=2

2

Input hold time

tSH

1-

1-1-1-1-

ns

3

CLK to output in Low-Z

tSLZ

1-

1-1-1-1-

ns

2

CLK to output

in Hi-Z

CAS Latency=3

tSHZ

-

5

-

5.5

-

5.5

-

6

-

6

ns

CAS Latency=2

-

6

-

6

-

6

-

6

-

8

2. Minimum delay is required to complete write.

3. All parts allow every cycle column address change.

4. In case of row precharge interrupt, auto precharge and read burst stop.

5. Also, supported tRDL=2CLK for - 60 part which is distinguished by bucket code "J".

From the next generation, tRDL will be only 2CLK for every clock frequency.

Parameter

Symbol

Version

Unit

-55

-60

-70

-80

-10

CLK cycle time

tCC(min)

5.5

6

7

8

10

ns

Row active to row active delay

tRRD(min)

11

12

14

16

20

ns

RAS to CAS delay

tRCD(min)

16.5

18

20

ns

Row precharge time

tRP(min)

16.5

18

20

ns

Row active time

tRAS(min)

38.5

42

49

48

ns

tRAS(max)

100

us

Row cycle time

tRC(min)55

60

69

70

ns

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