LM34923

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SNVS695A – MARCH 2011 – REVISED FEBRUARY 2013

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2)

VIN, UV to RTN

-0.3V to 80V

BST to RTN

-0.3V to 88V

SW to RTN (Steady State)

BST to VCC

80V

BST to SW

10V

VCC, UVO, RT to RTN

–0.3V to 10V

FB, RT, to RTN

-0.3 to 5V

2kV

For soldering specifications see: Application Note SNOA549.

Junction Temperature

150°C

Storage Temperature Range

-55°C to +150°C

(1)

If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.

(2)

Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which

operation of the device is intended to be functional. For specifications and test conditions, see the Electrical Characteristics.

(3)

The human body model is a 100pF capacitor discharged through a 1.5k

Ω resistor into each pin.

Operating Ratings

(1)

6V to 75V

Operating Junction Temperature

−40°C to + 125°C

(1)

Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which

operation of the device is intended to be functional. For specifications and test conditions, see the Electrical Characteristics.

Electrical Characteristics

otherwise stated the following conditions apply: VIN = 48V

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VCC Supply

Vcc Reg

Vcc Regulator Output

Vin = 48V

7.1

7.5

7.9

V

Vin – Vcc

240

mV

Vcc Output Impedance

Vin =6V

45

Ω

Vcc Current Limit

20

30

mA

Vcc UVLO

Vcc Increasing

4

4.8

V

Vcc UVLO hysteresis

450

mV

Iin Operating current

FB = 3V, Vin = 48V

1

1.32

mA

Iin Shutdown Current

RT/SD = 0V

20

70

µA

Switch Characteristics

Buck switch Rds(on)

Itest = 200 mA

0.56

1.1

Ω

Gate Drive UVLO

Vbst – Vsw Rising

2.15

3

3.8

V

Gate Drive UVLO hysteresis

250

mV

Pre-charge switch voltage

At 1 mA

0.8

V

Pre-charge switch on-time

150

ns

(1)

specified by correlating the electrical characteristics to process and temperature variations and applying statistical process control.

(2)

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