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DS2411P Datasheet(PDF) 2 Page - Dallas Semiconductor |
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DS2411P Datasheet(HTML) 2 Page - Dallas Semiconductor |
2 / 11 page DS2411 2 of 11 ABSOLUTE MAXIMUM RATINGS* I/O Voltage to GND -0.5V to +6V VCC Voltage to GND -0.5V to +6V I/O, VCC Current ±20mA Operating Temperature Range -40°C to +85°C Junction Temperature +150°C Storage Temperature Range -55°C to +125°C Soldering Temperature See IPC/JEDEC J-STD- 020A Specification * This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability. ELECTRICAL CHARACTERISTICS (VCC = 1.5V to 5.25V; TA = -40 °C to +85°C.) PARAMETER SYMBOL CONDITIONS MIN MAX UNITS Operating Temperature TA (Note 1) -40 +85 °C Supply Voltage VCC (Note 1) 1.5 5.25 V 1-Wire Pullup VCC = VPUP (Note 1) 1.5 5.25 V I/O PIN GENERAL DATA 1-Wire Pullup Resistance RPUP (Notes 1, 2) 0.3 2.2 k W Power-Up Delay tPWRP VCC stable to first 1-Wire command (Notes 1, 3) 1200 µs Input Capacitance CIO (Note 3) 100 pF Input Load Current IL 0V ≤ V(I/O) ≤ VCC -1 +1 µA Standby Supply Current ICCS V(I/O) ≤ VIL, or V(I/O) ≥ VIH 1 µA Active Supply Current ICCA 100 µA High-to-Low Switching Threshold VTL (Notes 3, 4, 5) 0.4 3.2 V Input Low Voltage VIL (Note 1) 0.30 V Input High Voltage VIH (Note 1) VCC - 0.3 V Low-to-High Switching Threshold VTH (Notes 3, 4, 6) 0.75 3.4 V Switching Hysteresis VHY (Notes 3, 7) 0.18 V Output Low Voltage at 4mA VOL (Note 8) 0.4 V Standard speed (Note 9, 3) 1.25 5 Rising Edge Holdoff tREH Overdrive speed (Note 9, 3) 0.5 2 µs Standard speed, RPUP = 2.2k W (Note 1) 5 Overdrive speed, RPUP = 2.2k W (Note 1) 2 Recovery Time tREC Overdrive speed, directly prior to reset pulse; RPUP = 2.2k W (Note 1) 5 µs Standard speed 65 Overdrive VCC ≥ 2.2V 8 Timeslot Duration tSLOT Overdrive VCC ≥ 1.5V 10 µs |
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