IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXXA50N60B3 IXXP50N60B3

IXXH50N60B3

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Notes:

1. Pulse test, t

 300μs, duty cycle, d  2%.

2. Switching times & energy losses may increase for higher V

Symbol Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

12

19

S

C

2230

pF

C

oes

V

195

pF

C

res

44

pF

Q

g(on)

70

nC

Q

ge

I

16

nC

Q

gc

29

nC

t

d(on)

27

ns

t

ri

40

ns

E

on

0.67

mJ

t

d(off)

100

150

ns

t

fi

135

ns

E

0.74

1.20

mJ

t

d(on)

30

ns

t

ri

45

ns

E

on

1.40

mJ

t

d(off)

130

ns

t

fi

190

ns

E

off

1.20

mJ

R

thJC

0.25 °C/W

R

thCS

TO-247

0.21

°C/W

TO-220

0.50

°C/W

Inductive load, T

I

V

Note 2

Inductive load, T

I

V

Note 2

1 - Gate

2,4 - Collector

3 - Emitter

TO-220 Outline

TO-247 Outline

Pins: 1 - Gate

2 - Collector

3 - Emitter

TO-263 Outline

1 = Gate

2,4 = Collector

3 = Emitter