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AS7C256A-20TIN Datasheet(PDF) 2 Page - Alliance Semiconductor Corporation |
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AS7C256A-20TIN Datasheet(HTML) 2 Page - Alliance Semiconductor Corporation |
2 / 9 page ® AS7C256A 9/24/04; v.1.2 Alliance Semiconductor P. 2 of 9 Functional description The AS7C256A is a 5.0V high-performance CMOS 262,144-bit Static Random-Access Memory (SRAM) device organized as 32,768 words × 8 bits. It is designed for memory applications requiring fast data access at low voltage, including PentiumTM, PowerPCTM, and portable computing. Alliance’s advanced circuit design and process techniques permit 5.0V operation without sacrificing performance or operating margins. The device enters standby mode when CE is high. CMOS standby mode consumes ≤11 mW. Normal operation offers 75% power reduction after initial access, resulting in significant power savings during CPU idle, suspend, and stretch mode. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5, 6, 7, 8 ns are ideal for high-performance applications. The chip enable (CE) input permits easy memory expansion with multiple-bank memory organizations. A write cycle is accomplished by asserting chip enable (CE) and write enable (WE) LOW. Data on the input pins I/O0-I/O7 is written on the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE). A read cycle is accomplished by asserting chip enable (CE) and output enable (OE) LOW, with write enable (WE) high. The chip drives I/O pins with the data word referenced by the input address. When chip enable or output enable is high, or write enable is low, output drivers stay in high-impedance mode. All chip inputs and outputs are TTL-compatible. Operation is from a single 5.0 ±0.5V supply. The AS7C256A is packaged in high volume industry standard packages. Absolute maximum ratings Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Truth table Key: X = Don’t care, L = Low, H = High Parameter Symbol Min Max Unit Voltage on VCC relative to GND Vt1 –0.5 +7.0 V Voltage on any pin relative to GND Vt2 –0.5 VCC + 0.5 V Power dissipation PD –1.0 W Storage temperature (plastic) Tstg –65 +150 oC Ambient temperature with VCC applied Tbias –55 +125 oC DC current into outputs (low) IOUT –20 mA CE WE OE Data Mode H X X High Z Standby (ISB, ISB1) L H H High Z Output disable (ICC) LHL DOUT Read (ICC) LL X DIN Write (ICC) |
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