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TDKSLF10145T-221MR65 Datasheet(PDF) 2 Page - Texas Instruments

Part # TDKSLF10145T-221MR65
Description  SM74301 100V, 350 mA Constant On-Time Buck Switching Regulator
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

TDKSLF10145T-221MR65 Datasheet(HTML) 2 Page - Texas Instruments

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8
7
6
5
4
3
2
1
FB
VIN
Exposed Pad on Bottom
Connect to Ground
VCC
RT/SD
SW
BST
RCL
RTN
1
2
3
4
5
8
7
6
FB
VIN
VCC
RT/SD
SW
BST
RCL
RTN
SM74301
SNVS719A – JULY 2011
www.ti.com
Connection Diagram
Figure 1. Top View
Figure 2. Top View
8-Lead WSON
8-Lead VSSOP
PIN DESCRIPTIONS
Pin
Name
Description
Application Information
1
SW
Switching Node
Power switching node. Connect to the output inductor, re-circulating diode, and
bootstrap capacitor.
2
BST
Boost Pin (Boot–strap capacitor
An external capacitor is required between the BST and the SW pins. A 0.01 µF
input)
ceramic capacitor is recommended. An internal diode charges the capacitor
from VCC during each off-time.
3
RCL
Current Limit OFF time set pin
A resistor between this pin and RTN sets the off-time when current limit is
detected. The off-time is preset to 35 µs if FB = 0V.
4
RTN
Ground pin
Ground for the entire circuit.
5
FB
Feedback input from Regulated
This pin is connected to the inverting input of the internal regulation comparator.
Output
The regulation threshold is 2.5V.
6
RT/SD
On time set pin
A resistor between this pin and VIN sets the switch on time as a function of VIN.
The minimum recommended on time is 400 ns at the maximum input voltage.
This pin can be used for remote shutdown.
7
VCC
Output from the internal high voltage
This regulated voltage provides gate drive power for the internal Buck switch.
series pass regulator.
An internal diode is provided between this pin and the BST pin. A local 0.47 µF
decoupling capacitor is required. The series pass regulator is current limited to 9
mA.
8
VIN
Input voltage
Input operating range: 6V to 95V.
EP
Exposed Pad
The exposed pad has no electrical contact. Connect to system ground plane for
reduced thermal resistance.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
2
Submit Documentation Feedback
Copyright © 2011, Texas Instruments Incorporated
Product Folder Links: SM74301


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