DMP6023LE

Document number: DS37199 Rev. 3 - 2

2 of 7

www.diodes.com

January 2015

© Diodes Incorporated

DMP6023LE

Characteristic

Symbol

Value

Units

Drain-Source Voltage

-60

V

Gate-Source Voltage

±20

V

-7

-5.6

A

-18.2

-14.5

A

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

-50

A

Maximum Continuous Body Diode Forward Current (Note 5)

-2

A

Avalanche Current, L = 0.1mH

-35.5

A

Avalanche Energy, L = 0.1mH

62.9

mJ

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

2

1.3

W

Thermal Resistance, Junction to Ambient (Note 5)

60

°C/W

Total Power Dissipation (Note 5)

17.3

W

Thermal Resistance, Junction to Case (Note 5)

7.2

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

-60

—

—

V

—

—

-1

µA

Gate-Source Leakage

—

—

±100

nA

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

-1

—

-3

V

Static Drain-Source On-Resistance

—

—

28

mΩ

—

—

35

Diode Forward Voltage

—

-0.7

-1.2

V

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

—

2569

—

pF

f = 1MHz

Output Capacitance

—

179

—

pF

Reverse Transfer Capacitance

—

143

—

pF

Gate Resistance

—

8

—

Ω

—

26.5

—

nC

—

53.1

—

nC

Gate-Source Charge

—

7.1

—

nC

Gate-Drain Charge

—

12.6

—

nC

Turn-On Delay Time

—

6

—

ns

Turn-On Rise Time

—

7.1

—

ns

Turn-Off Delay Time

—

110

—

ns

Turn-Off Fall Time

—

62

—

ns

Body Diode Reverse Recovery Time

—



20

—



nS

Body Diode Reverse Recovery Charge

—



14

—



nC

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square pad layout.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.