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DMP4025LSSQ-13 Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMP4025LSSQ-13 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 7 page DMP4025LSSQ Document Number: DS38881 Rev: 1 - 2 2 of 7 www.diodes.com May 2016 © Diodes Incorporated DMP4025LSSQ Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -40 V Gate-Source Voltage VGSS 20 Continuous Drain Current VGS = -10V (Note 7) ID -8.0 A TA = +70°C (Note 7) -6.9 (Note 6) -6.0 Pulsed Drain Current VGS = -10V (Note 8) IDM -30 Continuous Source Current (Body Diode) (Note 8) IS -8.0 Pulsed Source Current (Body Diode) (Note 8) ISM -30 Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 6) PD 1.52 W (Note 7) 2.4 Thermal Resistance, Junction to Ambient (Note 6) RθJA 82 °C/W (Note 7) 52 Thermal Resistance, Junction to Lead (Note 9) RθJL 48.85 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 10) Drain-Source Breakdown Voltage BVDSS -40 V ID = -250µA, VGS = 0V Zero Gate Voltage Drain Current IDSS -1.0 µA VDS = -40V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS (Note 10) Gate Threshold Voltage VGS(TH) -0.8 -1.3 -1.8 V ID = -250µA, VDS = VGS Static Drain-Source On-Resistance RDS(ON) 18 25 m Ω VGS = -10V, ID = -3A 30 45 VGS = -4.5V, ID = -3A Forward Transconductance gFS 16.6 S VDS = -5V, ID = -3A Diode Forward Voltage VSD -0.7 -1.0 V IS = -1A, VGS = 0V DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance CISS 1,640 pF VDS = -20V, VGS = 0V f = 1MHz Output Capacitance COSS 179 Reverse Transfer Capacitance CRSS 128 Gate Resistance RG 6.43 Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge QG 14.0 nC VGS = -4.5V VDS = -20V ID = -3A Total Gate Charge QG 33.7 VGS = -10V Gate-Source Charge QGS 5.5 Gate-Drain Charge QGD 7.3 Turn-On Delay Time tD(ON) 6.9 ns VDD = -20V, VGS = -10V ID = -3A Turn-On Rise Time tR 14.7 Turn-Off Delay Time tD(OFF) 53.7 Turn-Off Fall Time tF 30.9 Notes: 6. For a device surface mounted on minimum recommended FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 7. Same as Note (6), except the device is surface mounted on 25mm x 25mm x 1.6mm FR4 PCB. 8. Repetitive rating on 25mm X 25mm FR4 PCB, D=0.02, pulse width 300µs – pulse width by maximum junction temperature. 9. Thermal resistance from junction to solder-point (at the end of the drain lead). 10. Short duration pulse test used to minimize self-heating effect. 11. Guaranteed by design. Not subject to production testing. |
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