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DMP4015SPSQ-13 Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMP4015SPSQ-13 Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 6 page  DMP4015SPS Document number: DS35518 Rev. 9 - 2 2 of 6 www.diodes.com November 2013 © Diodes Incorporated DMP4015SPS POWERDI is a registered trademark of Diodes Incorporated Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -40 V Gate-Source Voltage VGSS ±25 V Continuous Drain Current (Note 6) VGS = -10V Steady State TA = +25°C TA = +70°C ID -8.5 -6.8 A t<10s TA = +25°C TA = +70°C ID -13.0 -10.5 A Continuous Drain Current (Note 7) VGS = -10V Steady State TA = +25°C TA = +70°C ID -11.0 -8.7 A t<10s TA = +25°C TA = +70°C ID -17.0 -13.5 A Pulsed Drain Current (10μs pulse, duty cycle = 1%) IDM -100 A Maximum Body Diode Continuous Current (Note 7) IS -3.5 A Avalanche Current (Note 8) IAS -22 A Avalanche Energy (Note 8) EAS 242 mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 6) TA = +25°C PD 1.3 W TA = +70°C 0.8 Thermal Resistance, Junction to Ambient (Note 6) Steady state RθJA 96.4 °C/W t<10s 40.6 °C/W Total Power Dissipation (Note 7) TA = +25°C PD 2.1 W TA = +70°C 1.4 Thermal Resistance, Junction to Ambient (Note 7) Steady state RθJA 55.0 °C/W t<10s 24.0 °C/W Thermal Resistance, Junction to Case (Note 7) RθJC 4.15 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BVDSS -40 V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current IDSS -1 µA VDS = -40V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 25V, VDS = 0V ON CHARACTERISTICS (Note 9) Gate Threshold Voltage VGS(th) -1.5 -2.0 -2.5 V VDS = VGS, ID = -250A Static Drain-Source On-Resistance RDS (ON) 7 11 mΩ VGS = -10V, ID = -9.8A 9 15 VGS = -4.5V, ID = -9.8A Forward Transfer Admittance |Yfs| 26 S VDS = -20V, ID = -9.8A Diode Forward Voltage VSD -0.7 -1.0 V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Ciss 4234 pF VDS = -20V, VGS = 0V f = 1.0MHz Output Capacitance Coss 1036 Reverse Transfer Capacitance Crss 526 Gate Resistance RG 7.77 Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge Qg 47.5 nC VDS = -20V, VGS = -5V ID = -9.8A Gate-Source Charge Qgs 14.2 Gate-Drain Charge Qgd 13.5 Turn-On Delay Time tD(on) 13.2 ns VGS = -10V, VDD = -20V, RG = 6Ω, ID = -1A, RL = 20Ω Turn-On Rise Time tr 10.0 Turn-Off Delay Time tD(off) 302.7 Turn-Off Fall Time tf 137.9 Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate 8. UIS in production with L = 0.1mH, TJ = +25°C 9 .Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to production testing. |
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Similar Description - DMP4015SPSQ-13 |
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