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LDC1612-Q1 Datasheet(PDF) 6 Page - Texas Instruments |
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LDC1612-Q1 Datasheet(HTML) 6 Page - Texas Instruments |
6 / 62 page 6 LDC1612-Q1, LDC1614-Q1 SNOSCZ8 – APRIL 2016 www.ti.com Product Folder Links: LDC1612-Q1 LDC1614-Q1 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated (1) Electrical Characteristics Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. Absolute Maximum Ratings indicate junction temperature limits beyond which the device may be permanently degraded, either mechanically or electrically. (2) Register values are represented as either binary (b is the prefix to the digits), or hexadecimal (0x is the prefix to the digits). Decimal values have no prefix. (3) Limits are ensured by testing, design, or statistical analysis at 25°C. Limits over the operating temperature range are ensured through correlations using statistical quality control (SQC) method. (4) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and also depend on the application and configuration. The typical values are not tested and are not ensured on shipped production material. (5) I2C read/write communication and pullup resistors current through SCL, SDA not included. (6) Sensor inductor: 2 layer, 32 turns/layer, 14mm diameter, PCB inductor with L=19.4 µH, RP=5.7 kΩ at 2MHz Sensor capacitor: 330 pF 1% COG/NP0 Target: Aluminum, 1.5mm thickness Channel = Channel 0 (continuous mode) CLKIN = 40 MHz, CHx_FIN_DIVIDER = b0000, CHx_FREF_DIVIDER = b00 0000 0001 CH0_RCOUNT = 0xFFFF, SETTLECOUNT_CH0 = 0x0100 RP_OVERRIDE = b1, AUTO_AMP_DIS = b1, DRIVE_CURRENT_CH0 = 0x9800 7.5 Electrical Characteristics (1) Unless otherwise specified, all limits ensured for TA = 25°C, VDD = 3.3 V PARAMETER TEST CONDITIONS(2) MIN(3) TYP(4) MAX(3) UNIT POWER VDD Supply Voltage TA = –40°C to +125°C 2.7 3.6 V IDD Supply Current (not including sensor current)(5) CLKIN = 10MHz (6) 2.1 mA IDDSL Sleep Mode Supply Current(5) 35 60 µA ISD Shutdown Mode Supply Current(5) 0.2 1 µA SENSOR ISENSORMAX Sensor Maximum Current drive HIGH_CURRENT_DRV = b0 DRIVE_CURRENT_CHx = 0xF800 1.5 mA RP Sensor RP 1 100 k Ω IHDSENSORMAX High current sensor drive mode: Sensor Maximum Current HIGH_CURRENT_DRV = b1 DRIVE_CURRENT_CH0 = 0xF800 Channel 0 only 6 mA RP_HD_MIN Minimum sensor RP 250 Ω fSENSOR Sensor Resonance Frequency TA = –40°C to +125°C 0.001 10 MHz VSENSORMAX Maximum oscillation amplitude (peak) 1.8 V NBITS Number of bits 28 bits fCS Maximum Channel Sample Rate single active channel continuous conversion, SCL=400kHz 4.08 kSPS CIN Sensor Pin input capacitance 4 pF MASTER CLOCK fCLKIN External Master Clock Input Frequency (CLKIN) TA = –40°C to +125°C 2 40 MHz CLKINDUTY_MIN External Master Clock minimum acceptable duty cycle (CLKIN) 40% CLKINDUTY_MAX External Master Clock maximum acceptable duty cycle (CLKIN) 60% VCLKIN_LO CLKIN low voltage threshold 0.3 ˣVDD V VCLKIN_HI CLKIN high voltage threshold 0.7 ˣVD D V fINTCLK Internal Master Clock Frequency range 35 43.4 55 MHz TCf_int_μ Internal Master Clock Temperature Coefficient mean –13 ppm/°C 7.6 Timing Characteristics MIN NOM MAX UNIT tWAKEUP Wake-up Time from SD high-low transition to I2C readback 2 ms tWD-TIMEOUT Sensor recovery time (after watchdog timeout) 5.2 ms |
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Similar Description - LDC1612-Q1 |
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