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DS92LV010ATM Datasheet(PDF) 2 Page - Texas Instruments |
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DS92LV010ATM Datasheet(HTML) 2 Page - Texas Instruments |
2 / 17 page DS92LV010A SNLS007E – MAY 1998 – REVISED APRIL 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ABSOLUTE MAXIMUM RATINGS (1) (2) (3) Supply Voltage (VCC) 6.0V Enable Input Voltage (DE, RE) −0.3V to (VCC + 0.3V) Driver Input Voltage (DIN) −0.3V to (VCC + 0.3V) Receiver Output Voltage (ROUT) −0.3V to (VCC + 0.3V) Bus Pin Voltage (DO/RI±) −0.3V to + 3.9V Driver Short Circuit Current Continuous ESD (HBM 1.5 k Ω, 100 pF) >2.0 kV Maximum Package Power Dissipation at 25°C SOIC 1025 mW Derate SOIC Package 8.2 mW/°C Junction Temperature +150°C Storage Temperature Range −65°C to +150°C Lead Temperature (Soldering, 4 sec.) 260°C (1) All currents into device pins are positive; all currents out of device pins are negative. All voltages are referenced to device ground except VOD, VID, VTH and VTL unless otherwise specified. (2) Absolute Maximum Ratings are these beyond which the safety of the device cannot be ensured. They are not meant to imply that the device should be operated at these limits. The table of “Electrical Characteristics” provides conditions for actual device operation. (3) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications. RECOMMENDED OPERATING CONDITIONS Min Max Units Supply Voltage (VCC), or 3.0 3.6 V Supply Voltage (VCC) 4.5 5.5 V Receiver Input Voltage 0.0 2.9 V Operating Free Air Temperature −40 +85 °C 2 Submit Documentation Feedback Copyright © 1998–2013, Texas Instruments Incorporated Product Folder Links: DS92LV010A |
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