1A

1OE

SW

1B

2A

2OE

SW

2B

2

1

5

7

3

6

SN74CB3Q3306A-EP

SCDS352 – DECEMBER 2013

www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

DESCRIPTION

The SN74CB3Q3306A is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of

for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device

also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus.

Specifically designed to support high-bandwidth applications, the SN74CB3Q3306A provides an optimized

interface solution ideally suited for broadband communications, networking, and data-intensive computing

systems.

The SN74CB3Q3306A is organized as two 1-bit switches with separate output-enable (1OE, 2OE) inputs. It can

be used as two 1-bit bus switches or as one 2-bit bus switch. When OE is low, the associated 1-bit bus switch is

ON and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high,

the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.

current backflow through the device when it is powered down. The device has isolation during power off.

resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

Table 1. FUNCTION TABLE

(EACH BUS SWITCH)

INPUT

INPUT/OUTPUT

FUNCTION

OE

A

L

B

A port = B port

H

Z

Disconnect

LOGIC DIAGRAM (POSITIVE LOGIC)

2

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