DS90CP02

www.ti.com

SNLS267A – NOVEMBER 2008 – REVISED MARCH 2013

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2)

−0.3V to +4.0V

CMOS Input Voltage

LVDS Receiver Input Voltage

−0.3V to +3.6V

LVDS Driver Output Voltage

−0.3V to +3.6V

LVDS Output Short Circuit Current

40mA

Junction Temperature

+150°C

Storage Temperature

−65°C to +150°C

Lead Temperature

(Soldering, 4sec.)

+260°C

Maximum Package Power Dissipation at 25°C

UQFN-28

4.31 W

Derating above 25°C

UQFN-28

34.5 mW/°C

Thermal Resistance,

UQFN-28

29°C/W

ESD Rating

HBM, 1.5 k

Ω, 100 pF

6.5 kV

EIAJ, 0

Ω, 200 pF

>250V

(1)

“Absolute Maximum Ratings” are the ratings beyond which the safety of the device cannot be guaranteed. They are not meant to imply

that the device should be operated at these limits.

(2)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and

specifications.

Recommended Operating Conditions

Min

Typ

Max

Unit

3.0

3.3

3.6

V

Receiver Input Voltage

0

3.6

V

Operating Free Air Temperature

−40

25

85

°C

Junction Temperature

150

°C

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