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DS90CP02 Datasheet(PDF) 5 Page - Texas Instruments |
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DS90CP02 Datasheet(HTML) 5 Page - Texas Instruments |
5 / 16 page DS90CP02 www.ti.com SNLS267A – NOVEMBER 2008 – REVISED MARCH 2013 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings (1) (2) Supply Voltage (VDD) −0.3V to +4.0V CMOS Input Voltage −0.3V to (VDD +0.3V) LVDS Receiver Input Voltage −0.3V to +3.6V LVDS Driver Output Voltage −0.3V to +3.6V LVDS Output Short Circuit Current 40mA Junction Temperature +150°C Storage Temperature −65°C to +150°C Lead Temperature (Soldering, 4sec.) +260°C Maximum Package Power Dissipation at 25°C UQFN-28 4.31 W Derating above 25°C UQFN-28 34.5 mW/°C Thermal Resistance, θJA UQFN-28 29°C/W ESD Rating HBM, 1.5 k Ω, 100 pF 6.5 kV EIAJ, 0 Ω, 200 pF >250V (1) “Absolute Maximum Ratings” are the ratings beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the device should be operated at these limits. (2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications. Recommended Operating Conditions Min Typ Max Unit Supply Voltage (VDD– GND) 3.0 3.3 3.6 V Receiver Input Voltage 0 3.6 V Operating Free Air Temperature −40 25 85 °C Junction Temperature 150 °C Copyright © 2008–2013, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: DS90CP02 |
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