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FX021 Datasheet(PDF) 2 Page - Texas Instruments |
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FX021 Datasheet(HTML) 2 Page - Texas Instruments |
2 / 20 page CSD97374Q4M SLPS382C – JANUARY 2013 – REVISED JULY 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ABSOLUTE MAXIMUM RATINGS (1) TA = 25°C (unless otherwise noted) VALUE UNIT MIN MAX VIN to PGND -0.3 30 V VSW to PGND , VIN to VSW -0.3 30 V VSW to PGND, VIN to VSW (<10ns) -7 33 V VDD to PGND –0.3 6 V PWM, SKIP# to PGND –0.3 6 V BOOT to PGND –0.3 35 V BOOT to PGND (<10ns) -2 38 V BOOT to BOOT_R –0.3 6 V Human Body Model (HBM) 2000 V ESD Rating Charged Device Model (CDM) 500 V Power Dissipation, PD 8 W Operating Temperature Range, TJ -40 150 °C Storage Temperature Range, TSTG –55 150 °C (1) Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to Absolute Maximum rated conditions for extended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS TA = 25° (unless otherwise noted) Parameter Conditions MIN MAX UNIT Gate Drive Voltage, VDD 4.5 5.5 V Input Supply Voltage, VIN 24 V Continuous Output Current, IOUT VIN = 12V, VDD = 5V, VOUT = 1.8V, 25 A fSW = 500kHz, LOUT = 0.29µH (1) Peak Output Current, IOUT-PK (2) 60 A Switching Frequency, fSW CBST = 0.1µF (min) 2000 kHz On Time Duty Cycle 85 % Minimum PWM On Time 40 ns Operating Temperature –40 125 °C (1) Measurement made with six 10-µF (TDK C3216X5R1C106KT or equivalent) ceramic capacitors placed across VIN to PGND pins. (2) System conditions as defined in Note 1. Peak Output Current is applied for tp = 10ms, duty cycle ≤ 1% THERMAL INFORMATION TA = 25°C (unless otherwise noted) PARAMETER MIN TYP MAX UNIT RθJC Thermal Resistance, Junction-to-Case (Top of package)(1) 22.8 °C/W RθJB Thermal Resistance, Junction-to-Board(2) 2.5 °C/W (1) RθJC is determined with the device mounted on a 1-inch² (6.45 -cm²), 2-oz (.071-mm thick) Cu pad on a 1.5-inch x 1.5-inch, 0.06-inch (1.52-mm) thick FR4 board. (2) RθJB value based on hottest board temperature within 1mm of the package. 2 Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Not Recommended For New Designs |
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