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BQ500414QRGZRQ1 Datasheet(PDF) 5 Page - Texas Instruments

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Part # BQ500414QRGZRQ1
Description  Qi Compliant Wireless Power Transmitter Manager
Download  34 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

BQ500414QRGZRQ1 Datasheet(HTML) 5 Page - Texas Instruments

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SLUSBE4B – JANUARY 2014 – REVISED JUNE 2014
Pin Functions (continued)
PIN
I/O
DESCRIPTION
NAME
NUMBER
I_SENSE
42
I
Transmitter input current, used for parasitic loss calculations. Use 40-m
Ω sense resistor and A
= 50 gain current sense amp
LOSS_THR
43
I
Input to program FOD/PMOD thresholds and FOD_CAL correction
LED_MODE
44
I
LED Mode Select
V_SENSE
45
I
Transmitter power train input voltage, used for FOD and Loss calculations.
Unused
46
I
This pin can be either connected to GND or left open. Connecting to GND can improve layout
grounding
GND
47
GND
ADCREF
48
I
External reference voltage input. Connect this input to GND.
EPAD
49
Flood with copper GND plane and stitch vias to PCB internal GND plane
7 Specifications
7.1 Absolute Maximum Ratings
(1)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
Voltage applied at V33D to DGND
–0.3
3.6
Voltage applied at V33A to AGND
–0.3
3.6
V
Voltage applied to any pin(2)
–0.3
3.6
(1)
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
All voltages referenced to GND.
7.2 Handling Ratings
MIN
MAX
UNIT
Tstg
Storage temperature range
–40
150
°C
Human-Body Model (HBM)(2)
2
2
kV
V(ESD)
(1)
Charged-Device Model (CDM)(3)
750
750
kV
(1)
Electrostatic discharge (ESD) to measure device sensitivity and immunity to damage caused by assembly line electrostatic discharges in
to the device.
(2)
Level listed above is the passing level per ANSI, ESDA, and JEDEC JS-001. JEDEC document JEP155 states that 500-V HBM allows
safe manufacturing with a standard ESD control process.
(3)
Level listed above is the passing level per EIA-JEDEC JESD22-C101. JEDEC document JEP157 states that 250-V CDM allows
manufacturing without risk of damaging the device with a standard ESD control process.
Copyright © 2014, Texas Instruments Incorporated
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