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DRV2625YFFT Datasheet(PDF) 4 Page - Texas Instruments |
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DRV2625YFFT Datasheet(HTML) 4 Page - Texas Instruments |
4 / 77 page 4 DRV2625 SLOS879A – DECEMBER 2015 – REVISED DECEMBER 2015 www.ti.com Product Folder Links: DRV2625 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT Supply Voltage VDD –0.3 6 V Input voltage NRST –0.3 6 V SDA –0.3 6 V SCL –0.3 6 V TRIG/INTZ –0.3 6 V Operating free-air temperature range, TA –40 85 °C Operating junction temperature range, TJ –40 150 °C Storage temperature, Tstg –65 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.2 ESD Ratings MIN MAX UNIT V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) –1500 1500 V Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) –500 500 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT VDD Supply voltage 2.7 5.5 V RL Load impedance 8 Ω CL Load capacitance 100 pF ƒ(LRA) LRA frequency 45 300 Hz (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 6.4 Thermal Information THERMAL METRIC(1) DRV2625 UNIT DSBGA 9 PINS RθJA Junction-to-ambient thermal resistance 107 °C/W RθJC(top) Junction-to-case (top) thermal resistance 0.9 °C/W RθJB Junction-to-board thermal resistance 18.1 °C/W ψJT Junction-to-top characterization parameter 3.8 °C/W ψJB Junction-to-board characterization parameter 18.1 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance — °C/W |
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