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CSD18541F5 Datasheet(PDF) 3 Page - Texas Instruments |
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CSD18541F5 Datasheet(HTML) 3 Page - Texas Instruments |
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3 / 14 page  3 CSD18541F5 www.ti.com SLPS571 – MAY 2016 Product Folder Links: CSD18541F5 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated 5 Specifications 5.1 Electrical Characteristics TA = 25°C (unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0 V, IDS = 250 μA 60 V IDSS Drain-to-source leakage current VGS = 0 V, VDS = 48 V 1 µA IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 10 µA VGS(th) Gate-to-source threshold voltage VDS = VGS, IDS = 250 μA 1.4 1.75 2.2 V RDS(on) Drain-to-source on-resistance VGS = 4.5 V, IDS = 1 A 57 75 m Ω VGS = 10 V, IDS = 1 A 54 65 m Ω gfs Transconductance VDS = 6 V, IDS = 1 A 7.7 S DYNAMIC CHARACTERISTICS Ciss Input capacitance VGS = 0 V, VDS = 30 V, ƒ = 1 MHz 598 777 pF Coss Output capacitance 47 61 pF Crss Reverse transfer capacitance 8.1 10.5 pF RG Series gate resistance 1200 1600 Ω Qg Gate charge total (10 V) VDS = 30 V, IDS = 1 A 11 14 nC Qgd Gate charge gate-to-drain 1.6 nC Qgs Gate charge gate-to-source 1.5 nC Qg(th) Gate charge at Vth 0.8 nC Qoss Output charge VDS = 30 V, VGS = 0 V 3.2 nC td(on) Turn on delay time VDS = 30 V, VGS = 4.5 V, IDS = 1 A, RG = 0 Ω 572 ns tr Rise time 540 ns td(off) Turn off delay time 1076 ns tf Fall time 496 ns DIODE CHARACTERISTICS VSD Diode forward voltage ISD = 1 A, VGS = 0 V 0.8 1 V (1) Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu. (2) Device mounted on FR4 material with minimum Cu mounting area. 5.2 Thermal Information TA = 25°C (unless otherwise stated) THERMAL METRIC MIN TYP MAX UNIT RθJA Junction-to-ambient thermal resistance(1) 85 °C/W Junction-to-ambient thermal resistance(2) 245 °C/W |
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